Lamb wave type high frequency device and manufacturing method thereof

A technology of high-frequency equipment and manufacturing methods, applied in the direction of impedance networks, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve problems such as easy breakage, reduced yield, difficult operation, etc., and achieve unbreakable , Improve the yield, improve the effect of mechanical strength

Inactive Publication Date: 2009-10-14
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In these Patent Documents 1 and 2 and Non-Patent Documents 1 and 2, the piezoelectric substrate has a thickness of several μm to several tens of μm and is easily cracked, so handling is difficult.
In particular, Lamb wave-type high-frequency devices can achieve higher frequencies than surface acoustic waves. However, as disclosed in Patent Document 2, in order to excite Lamb waves, the thickness of the piezoelectric substrate must be set to several wavelengths.
Therefore, compared with the surface acoustic wave device, there are problems that it is easy to break, difficult to handle, and lower in yield

Method used

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  • Lamb wave type high frequency device and manufacturing method thereof
  • Lamb wave type high frequency device and manufacturing method thereof
  • Lamb wave type high frequency device and manufacturing method thereof

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Experimental program
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Effect test

Embodiment approach 1

[0049] figure 1 , figure 2 Represents the Lamb wave type high-frequency device related to Embodiment 1, figure 1 is its stereogram, figure 2 is a schematic representation figure 1 A cross-sectional view of the A-A section in . exist figure 1 Among them, the Lamb wave type high-frequency device 10 is constituted by joining the piezoelectric substrate 20 and the reinforcing substrate 50 .

[0050] The piezoelectric substrate 20 is a thin plate made of a quartz substrate with the same thickness, and an IDT electrode 30 made of comb-shaped aluminum is formed on one main surface, and a pair of reflectors are formed on both sides of the IDT electrode 30 in the traveling direction of the Lamb wave. Devices 41,42. The IDT electrode 30 has IN / OUT electrodes 31 and GND electrodes 32 . The IN / OUT electrodes 31 have a plurality of electrode fingers 31a and bus bars 31b connecting the electrode fingers 31a. The GND electrode 32 has a plurality of electrode fingers 32a and a bus b...

Embodiment approach 2

[0066] Next, Embodiment 2 of the present invention will be described with reference to the drawings. The foregoing embodiment 1 (refer to figure 2 ) is provided on the side of the reinforcing substrate, while Embodiment 2 is characterized in that it is provided on the side of the piezoelectric substrate. Therefore, differences from Embodiment 1 will be mainly described.

[0067] Figure 4 It is a cross-sectional view schematically showing the Lamb wave type high-frequency device 10 according to the second embodiment. exist Figure 4 In the piezoelectric substrate 20, the IDT electrodes 30 and the reflectors 41 and 42 are formed on one main surface (front surface), and the box-shaped recess 23 is formed on the other main surface (back surface).

[0068] The bottom thickness H of the concave portion 23 is set such that its relationship with the wavelength λ of the Lamb wave falls within the range of 0<2H / λ≦10. A rim 21 is formed around the recess 23 , and a joint surface 2...

Embodiment approach 3

[0071] Next, a Lamb wave-type high-frequency device according to Embodiment 3 of the present invention will be described with reference to the drawings. The foregoing embodiment 1 (refer to figure 2 ) provides a box-shaped concave portion for forming a space on the reinforcing substrate, and the third embodiment is characterized in that a groove-shaped concave portion is provided. Therefore, differences will be mainly described.

[0072] Figure 5 It is a perspective view schematically showing the Lamb wave type high-frequency device 110 according to the third embodiment.

[0073] On the reinforcement substrate 150 is formed a groove shape (approximately "" ” shape) of the concave portion 153. The concave portion 153 is formed to cross the reinforcing substrate 150, so the side surface in the width direction is opened, and the edge portion 151 is provided on both sides in the longitudinal direction. And, on the joint surface 152 on the upper surface of the edge portion 15...

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Abstract

The invention provides a Lamb wave high-frequency device and a manufacturing method of the Lamb wave high-frequency device. The device can improve structural strength and realize stable characteristics. The method is not easy to break during the manufacturing process and can increase the yield. A Lamb wave type high-frequency device (10) consists of a piezoelectric substrate (20) with an IDT electrode (30) formed on one main surface and a reinforcing substrate (50) bonded to the other main surface of the piezoelectric substrate (20). ) configuration, a space (54) having an area larger than the transmission region of the Lamb wave is provided on the bonding surface of the piezoelectric substrate (20) and the reinforcing substrate (50). In addition, the manufacturing method of the Lamb wave type high-frequency device (10) includes: a step of forming a recess (53) corresponding to a space (54) on the reinforcing substrate (50); forming a sacrificial layer in the recess (53) Step; after bonding the thick plate of the piezoelectric substrate (20) and the reinforcing substrate (50), a step of grinding the thick plate of the piezoelectric substrate (20) to a prescribed thickness; forming an IDT electrode (30) and a reflector (41, 42); and the step of removing the sacrificial layer to form a space (54).

Description

technical field [0001] The present invention relates to a Lamb wave type high frequency device and a method for manufacturing the Lamb wave type high frequency device. Specifically, it relates to a Lamb wave type high-frequency device formed by bonding a reinforcing substrate to a piezoelectric substrate having IDT electrodes and a method of manufacturing the same. Background technique [0002] Conventionally, as representative examples of high-frequency resonators, there are surface acoustic wave devices using Rayleigh waves, leaky waves, and SH waves, and those using volume waves, that is, Lamb waves. Ram wave element. [0003] For example, in a known Rayleigh-wave surface acoustic wave device, an IDT electrode is formed in the Z'-axis direction on the surface of a quartz substrate called ST-cut quartz (see, for example, Non-Patent Document 1). [0004] Also, a known SH-wave surface acoustic wave device transmits a transverse wave in which the propagation direction of a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/25H03H9/10H01L41/083
Inventor 田中悟
Owner SEIKO EPSON CORP
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