Pump ring

Abstract

The invention discloses a pump ring structure, applied to set in reaction cavity so that air in reaction cavity can be extracted in mean speed. It comprises ring main body and upper ring body set on it, which have a setting distance to reaction cavity so that the extraction channel formed among reaction cavity, ring main body and upper ring body is smooth; turbulent flow generated in extraction process is decreased and impurity storage is decreased. So the pollution in reaction cavity is improved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process device, in particular to a pump ring. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, CVD) is a method that uses chemical reactions to generate solid products from reactants (usually gases) in the reaction chamber (furnace tube) and deposit them on the surface of the chip. Thin Film Deposition Technology. The chemical vapor deposition method has a wide range of applications. For example, all thin films required for semiconductor devices, whether they are conductors, semiconductors, or dielectric materials (Dielectrics), can be prepared by chemical vapor deposition. [0003] However, for the chemical vapor deposition method, when the above-mentioned reaction gas forms a solid product, a large amount of reactant particles and by-products are usually accompanied, so it is necessary to use an exhaust device to extract the gas in the reaction chamber. . [...

AI Technical Summary

Problems solved by technology

[0005] However, when there are protrusions 22 on both sides of the pump port 12 on the inner wall 11 of the reaction chamber 10, the distance between the protrusions 22 and the pump ring 14 will be reduced.

That is, the width d11 of the gas extraction channel 18 will be reduced to d12, so that the gas extracted from the inner region 20 of the ring will generate turbulent flow (Turbulence Flow) due to the change of flow rate, and at the same time cause the particles in the reaction chamber to rise and accumulate in the On the inner wall 11 at the protrusion 22 (ie Figure 1A The illustrated accumulation place 24), resulting in problems such as contamination of the reaction chamber 10, abnormality of the machine, damage to semi-finished products in the equipment, etc.

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