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Mesopore titanic oxide /zinc oxide composite film preparation method

A technology of mesoporous titanium oxide and composite thin film, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of increased probability, increased dark current, increased transmission and residence time, etc., and achieves low cost, easy control, and preparation The effect of simple method

Inactive Publication Date: 2009-11-11
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These localized states form traps, constraining the movement of electrons in the film, increasing the transmission and residence time of electrons in the film, thus increasing the probability of recombination of electrons and electrolytes, resulting in an increase in dark current, thereby reducing the overall capacity of the DSSC battery. efficiency

Method used

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  • Mesopore titanic oxide /zinc oxide composite film preparation method
  • Mesopore titanic oxide /zinc oxide composite film preparation method
  • Mesopore titanic oxide /zinc oxide composite film preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] TiO 2 Preparation of / ZnO composite precursor solution: Dissolve 1.3g triblock polymer polyoxyethylene-polyoxypropylene-polyoxyethylene (P123) in absolute ethanol, add 3.2g concentrated hydrochloric acid after completely dissolving, and stir for 0.5 hours ; Then add 5ml of isopropyl titanate dropwise, stir for 0.5 hours, then add 0.2g of zinc acetate dihydrate dropwise, stir at room temperature (15-25°C) for 3 hours, and let stand for 24 hours for use.

[0025] Clean the substrate: the substrate is a single crystal silicon wafer with a crystal orientation of 100. The substrate was ultrasonically cleaned in absolute ethanol for 15 minutes, then ultrasonically cleaned in acetone for 15 minutes, and then ultrasonically cleaned in absolute ethanol for 15 minutes, N 2 Blow dry and set aside.

[0026] Spin coating of composite thin films: the prepared TiO 2 / ZnO composite precursor solution was dropped onto the substrate and spin-coated at a speed of 2000 rpm, and the spin...

Embodiment 2

[0030] TiO 2 Preparation of / ZnO composite precursor solution: Dissolve 1.3g triblock polymer polyoxyethylene-polyoxypropylene-polyoxyethylene (P123) in absolute ethanol, add 3.2g concentrated hydrochloric acid after completely dissolving, and stir for 0.5 hours ; Then add 6.2ml of tetra-n-butyl titanate dropwise, stir for 0.5 hours, then add 0.44g of zinc acetate dihydrate dropwise, stir at room temperature (15-25°C) for 3 hours, and let stand for 24 hours before use.

[0031] Clean the substrate: the substrate is a single crystal silicon wafer with a crystal orientation of 100. The substrate was ultrasonically cleaned in absolute ethanol for 15 minutes, then ultrasonically cleaned in acetone for 15 minutes, and then ultrasonically cleaned in absolute ethanol for 15 minutes, N 2 Blow dry and set aside.

[0032] Spin coating of composite thin films: the prepared TiO 2 / ZnO composite precursor solution was dropped onto the substrate and spin-coated at a speed of 2000 rpm, an...

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Abstract

The invention discloses a method for preparing a mesoporous titanium dioxide / zinc oxide composite film. The method is to use a block polymer template in an organic solvent to induce the hydrolysis of the precursor solution of titanium and the precursor of zinc to form an organic-inorganic Uniform and ordered mesoscopic structure, and then remove the template and crystallize the film at the same time, so as to obtain the mesoporous composite film with the skeleton of nanocrystals. The invention has the advantages of simple process, low cost and easy control of the components of the composite film; the content of TiO2 and ZnO in the composite mesoporous film can be regulated by controlling the amount of titanium and zinc precursors added.

Description

technical field [0001] The invention relates to a method for preparing a mesoporous semiconductor composite film, specifically a method for preparing mesoporous titanium dioxide / zinc oxide (TiO 2 / ZnO) composite film method. Background technique [0002] Mesoporous TiO 2 The material has tunable pore structure, high specific surface area and good photoelectric performance, showing broad application prospects in dye-sensitized solar cells, photocatalysts, chemical photosensitization, filtration, biomedical materials and gas sensors. In recent years, mesoporous TiO 2 The study of thin film materials has attracted the attention of scientists, especially the dye-sensitized nanocrystalline titanium dioxide photoelectrochemical solar cell (DSSC) has become an important research topic because of its cheap, efficient and simple process. Mesoporous TiO 2 Thin film materials can absorb more sensitizers, sensitizers and TiO 2 The C-O-Ti bond is formed on the surface, which improve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0264
Inventor 陶俊超孙艳乐阳葛美英陈鑫戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI