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Structure and method for testing metal interconnecting wire charge transfer

A technology for testing structures and interconnects, applied in the direction of single semiconductor device testing, semiconductor/solid-state device testing/measurement, circuits, etc., can solve problems such as increased evaluation cost, impossible metal interconnection monitoring, and consumption of silicon wafers. Achieve the effect of improving test efficiency, shortening test time and reducing cost

Active Publication Date: 2009-12-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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Problems solved by technology

However, the traditional electromigration evaluation method requires encapsulation and testing after dicing the sample, which consumes silicon wafers. During the evaluation process, an additional oven is used as a heating source to increase the ambient temperature, thereby increasing the evaluation cost, and from encapsulation to It takes several weeks for the evaluation to be completed, which makes it impossible for us to monitor the quality of the metal interconnect line in real time

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  • Structure and method for testing metal interconnecting wire charge transfer
  • Structure and method for testing metal interconnecting wire charge transfer

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Embodiment Construction

[0018] With the improvement of the integration level of modern integrated circuit chips, the length of the metal interconnection line and its interconnection level gradually increase, the line width of the metal interconnection line itself becomes narrower and narrower, and the current density passing through the metal line is also increasing , so such devices are more prone to electromigration. A fast and efficient metal interconnect electromigration evaluation structure can effectively monitor the reliability of the metal interconnect, and timely feedback the relevant situation to the production line, so as to strengthen the control of related process steps to obtain high quality and high reliability sex products.

[0019] A test structure for electromigration of a metal interconnect line of the present invention is as follows: figure 1 As shown, it includes an intrinsic polysilicon resistance 1, an interconnection test structure 2 and a temperature monitoring resistance 3,...

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Abstract

A test structure of metal interconnection wire electro-migration is prepared s setting interconnection wire test structure and temperature monitoring resistance to be parallel in side by side way, arranging intrinsic polysilicon resistance under interlayer media layer and arranging interconnection wire test structure and temperature monitoring resistance above interlayer media layer. The method utilizing said structure to test metal interconnection wire electro-migration is also disclosed.

Description

technical field [0001] The invention relates to a test structure for reliability of semiconductor devices, in particular to a test structure for electromigration of metal interconnection lines. The invention also relates to a test method for electromigration of metal interconnection wires. Background technique [0002] Electromigration of metal interconnects is one of the main failure mechanisms in microelectronic devices. Electromigration causes open and short circuits of metal interconnects, which increases device leakage current. After the device size develops to sub-micron and deep sub-micron, the width of the metal interconnection is also continuously reduced, the current density is continuously increased, and it is more likely to fail due to electromigration. Therefore, with the progress of the process, the evaluation of the electromigration of metal interconnection wires has attracted much attention. However, the traditional electromigration evaluation method requir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/00G01R31/26H01L21/66
CPCH01L2924/0002
Inventor 胡晓明仲志华韩永召
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP