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Conductive thin film and thin-film transistor

A technology of conductive thin films and organic semiconductors, which can be used in the manufacture of electrical solid devices, semiconductor devices, and semiconductor/solid state devices, etc., and can solve the problems of inability to smooth charge movement, disorderly arrangement of molecular axes, and reduced conductivity.

Inactive Publication Date: 2010-02-24
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The carrier mobility of a conductor layer or semiconductor layer formed using an organic electronic functional material is significantly lower than that of an inorganic semiconductor, because the organic electronic functional material is deposited only by evaporation or deposition. In the formed conductor layer or semiconductor layer, the molecular axes of the organic electronic functional materials inside the conductor layer or semiconductor layer are randomly arranged, so charge movement cannot be smoothly generated between a plurality of organic electronic functional materials, and thus the conductivity reduce
Therefore, in the conventional technology, it is difficult to use organic electronic functional materials to form conductive layers such as electrodes and wiring, semiconductor layers of semiconductor devices such as thin-film transistors and organic electroluminescent elements, especially high-precision image display devices and high-speed LSIs, etc. semiconductor layer

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0175] In Embodiments 1 to 3 of the present invention, for using carbon nanotubes as conductor materials or semiconductor materials, mixing the carbon nanotubes and liquid crystal organic compounds to form composite materials, the liquid crystal organic compounds of the composite materials are used It has good orientation, and the conductive film formed by orienting the molecules of carbon nanotubes well and closely, and the conductivity and carrier mobility are further improved, and the thin film transistor using the conductive film will be described. .

[0176] figure 1 It is a cross-sectional view schematically showing a part of the manufacturing process of the conductive thin film according to Embodiment 1 of the present invention.

[0177] exist figure 1 In, the conductive thin film 1 was produced as follows. That is, in figure 1In (a), two opposing electrodes 3 and 4 made of a material such as gold are provided with a gap of about 5 μm on the surface of a flexible...

Embodiment approach 2

[0188] figure 2 It is a cross-sectional view schematically showing a part of the manufacturing process of a composite semiconductor layer using the conductive thin film according to Embodiment 2 of the present invention as a semiconductor layer.

[0189] exist figure 2 Among them, the composite semiconductor layer 15 serving as the semiconductor layer 10 was formed in the following manner. That is, an alignment film (not shown) such as a polyimide film or a monomolecular film (not shown) formed on at least a surface of a portion where a channel (not shown) is formed is oriented in a predetermined direction by an alignment method such as a rubbing method. It is processed so as to cover at least a part of the source electrode 11 and the drain electrode 12 arranged to face each other on the substrate 2 and the upper surface of the substrate 2 located in the gap therebetween. Then, a composite compound 14 prepared by mixing semiconducting carbon nanotubes 13 and a liquid cryst...

Embodiment approach 3

[0196] image 3 It is a cross-sectional view schematically showing the structure of a thin film transistor according to Embodiment 3 of the present invention.

[0197] like image 3 As shown, the thin film transistor 18 a of this embodiment has a source electrode 11 and a drain electrode 12 formed by patterning an electrode material such as gold on a substrate 2 . In addition, between the source electrode 11, the drain electrode 12, and the gate insulating film 9 described later, there is a composite semiconductor layer 15 as a semiconductor layer 10 formed by a method described later. In addition, on the upper surface of the compound-based semiconductor layer 15, there is a gate insulating film 9 made of silicon oxide, a polyvinylidene fluoride-based organic compound, or the like. In addition, a gate electrode 17 made of an electrode material such as gold is provided on the upper portion of the gate insulating film 9 . These source electrode 11 and drain electrode 12 , gat...

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Abstract

This invention provides an inexpensive and flexible conductive thin film which is excellent in carrier mobility and electric conductivity and which is formed by highly orienting nanotube or an electronic functional organic material by simple and convenient means, as well as a thin film transistor using the conductive thin film. A conductive thin film (1) is formed by mixing a first material (5) having electric conductivity or semiconductivity and a second material (6) to prepare a mixture and orienting the mixture by utilizing liquid crystallinity thereof.

Description

technical field [0001] The present invention relates to a conductive thin film formed by aligning nanotubes or organic semiconductor compounds, and a thin film transistor using the conductive thin film as a semiconductor layer. Background technique [0002] A thin film transistor (TFT) used in a flat panel display or the like is configured such that a source electrode and a drain electrode are disposed on one surface of a semiconductor layer constituting the TFT, and a gate electrode is disposed approximately in the center of a channel on the other surface. [0003] Generally, the semiconductor layer of the thin film transistor having the above structure is formed by precisely controlling the semiconductor thin film formed on the substrate by a thin film control process. Here, the semiconductor layer of the thin film transistor formed by the thin film control process is required to have excellent carrier mobility for constituting a semiconductor device. Therefore, in conven...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L29/78H01L29/06H10K99/00
Inventor 脇田尚英
Owner PANASONIC CORP