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Ultraviolet photoelectric detector delta doped 4H-SiC PIN structure

A technology of electrical detectors and ultraviolet light, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems that have not been deeply involved in the preparation method of PIN structure ultraviolet photodetectors, and achieve improved stability and mechanical vibration resistance. Reduce dark current, reduce the effect of device dark current

Active Publication Date: 2007-07-18
XIAMEN SAN U OPTRONICS
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Problems solved by technology

E Monroy et al. have reported in "Semicond.Sci.Technol.18(2003) R33-R51" literature that photoconductive, Schottky Photodiodes, metal-semiconductor-metal (MSM) photodetectors, PIN photodetectors, and avalanche (APD) photodetectors. The literature also proposes that silicon carbide materials are used to prepare Schottky photodiodes and PN junction photodetectors. And particle detectors, but not deeply involved in PIN structure ultraviolet photodetectors and their preparation methods

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  • Ultraviolet photoelectric detector delta doped 4H-SiC PIN structure

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Embodiment Construction

[0026] Referring to Fig. 1, the structure of the δ-doped 4H-SiC PIN structure ultraviolet photodetector embodiment of the present invention is: n + Type 4H-SiC substrate 2 and the heavily doped n + Type buffer layer 3, lightly doped n - Type layer (I) 4 (doping concentration lower than 1.0×10 15 / cm 3 , thickness 2.0 μm), δ-doped n-type layer 13 (doping concentration 3.0×10 17 / cm 3 , thickness 0.125μm), lightly doped n - Type layer (II) 12 (doping concentration 6.0×10 15 / cm 3 , thickness 0.2μm) and heavily doped p +Type layer 11 , a device isolation step 5 , oxide layer 6 , p-type contact electrode 8 , n-type contact electrode 1 , pad 7 , p-type contact electrode window 10 and device photosensitive surface 9 . Among them, lightly doped n - type layer (I) 4, delta-doped n-type layer 13 and lightly doped n-type layer - The type layer (II) 12 together constitutes the intrinsic I layer in the delta-doped 4H-SiC PIN structure ultraviolet photodetector.

[0027] The fol...

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Abstract

The delta-doped 4H-SiC PIN structure UV photo-detector and its preparation method relates to a semiconductor photo-detector. On the n+ type SiC substrate, the n+ type buffer layer, the n- type layer 1, the layer of delta-doped n+ type, the n- type layer 11, and the p+ type layer grow extended. The passive film is set on the device surface, the p electrode is set on the p+-type layer, and the n electrode is set on the back of substrate. The substrate uses n+ type 4H-SiC or its homogeneity polymorphism body. During preparation, the extended layer mesa is etched out as the photosensitive surface, the growth oxide layer is processed thermal oxidation as the passive film, the p electrode is prepared on the p+ type layer, the photo-etching rubber is thrown to protect the oxide layer on the p+ type layer, the oxide layer on n+ type substrate is removed and the n electrode metal is deposited, the p electrode and the n electrode are annealed to form ohmic contact, the pressure-welding area is prepared to cover a corner of the p-type ohmic contact electrode, and the tube core dices is bonded and pack to be tube.

Description

technical field [0001] The invention relates to a semiconductor photodetector, in particular to a δ-doped 4H-SiC (silicon carbide) PIN structure ultraviolet photodetector and a preparation method thereof. Background technique [0002] The current ultraviolet photodetectors are mainly based on ultraviolet photomultiplier tubes. Although they have high sensitivity, they have disadvantages such as large volume, easy damage, and need to work at high pressure and low temperature. In recent years, the growing wide-bandgap semiconductor technology has opened up new fields for the research of ultraviolet detectors, and it has become possible to replace ultraviolet photomultiplier tubes with semiconductor ultraviolet detectors. E Monroy et al. have reported in "Semicond.Sci.Technol.18(2003) R33-R51" literature that photoconductive, Schottky Photodiodes, metal-semiconductor-metal (MSM) photodetectors, PIN photodetectors, and avalanche (APD) photodetectors. The literature also propose...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105H01L31/18
CPCY02P70/50
Inventor 吴正云陈厦平朱会丽卢嵩岳李凌
Owner XIAMEN SAN U OPTRONICS