Semiconductor laser device, semiconductor laser device mounting structure, semiconductor laser device manufacturing method and semiconductor laser device mounting method

Abstract

The present invention provides a semiconductor laser element, a semiconductor laser element mounting structure, a semiconductor laser element fabricating method and a semiconductor mounting method. An n-type GaAs buffer layer 4, an n-type GaInP intermediate layer 6, an n-type AlGaInP cladding layer 8, a non-doped MQW active layer 10, a p-type AlGaInP cladding layer 12, a p-type AlGaInP cladding layer 14 and a p-type GaAs cap layer 16 are formed on an n-type GaAs substrate 2. The p-type cladding layer 14 and the p-type cap layer 16 are formed in a ridge portion 15, and a narrow width portion 17 is formed including an upper portion of the n-type substrate 2 and the layers there above. An SiO2 film 18 is formed on the side surfaces of the ridge portion 15, the surfaces of the narrow width portion 17 and the surface of a step portion 2a of the n-type substrate 2. A p-side electrode layer 23 is formed on the surfaces of the SiO2 film 18 formed on ridge portion 15 and the narrow width portion 17.

Description

technical field [0001] The present invention relates to a semiconductor laser element, a mounting structure of the semiconductor laser element, a manufacturing method of the semiconductor laser element, and a mounting method of the semiconductor laser element. Background technique [0002] Conventionally, semiconductor laser elements are used as light sources for reading and writing of optical discs. 8A and 8B are cross-sectional views showing a conventional semiconductor laser device used as a light source for DVD (Digital Versatile Disc) writing. This semiconductor laser element is an AlGaInP-based red semiconductor laser element with a pulse power of 200 mW class. FIG. 8A is an air ridge type manufactured by a primary crystal growth process, and FIG. 8B is a regrowth buried type manufactured by a secondary crystal growth process. 9A and 9B are cross-sectional views showing a state in which the semiconductor laser elements 100 and 130 of FIGS. 8A and 8B are mounted on a ...

AI Technical Summary

Problems solved by technology

[0007] However, the conventional semiconductor laser element has a problem that it is difficult to reduce the size

In detail, when the width of the conventional semiconductor laser element is reduced, since the width of the active layer is reduced, the contact area of ​​the active layer with respect to other layers is reduced, and the heat dissipation is reduced. Shorten, or cause problems such as unstable emission wavelength and light quantity

In addition, the length in the longitudinal direction of the resonator of the semiconductor laser element (dimension in the depth direction) cannot be reduced because the resonance mode changes.

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