Lamb wave type high frequency device and manufacturing method thereof

A technology of high-frequency equipment and manufacturing method, applied in impedance networks, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problems of easy cracking, reduced yield, difficult operation, etc., and is not easy to crack. , Improve the yield and improve the effect of mechanical strength

Inactive Publication Date: 2007-09-12
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In these Patent Documents 1 and 2 and Non-Patent Documents 1 and 2, the piezoelectric substrate has a thickness of several μm to several tens of μm and is easily cracked, so handling is difficult.
In particular, Lamb wave-type high-frequency devices can achieve higher frequencies than surface acoustic waves. However, as disclosed in Patent Document 2, in order to excite Lamb waves, the thickness of the piezoelectric substrate must be set to several wavelengths.
Therefore, compared with the surface acoustic wave device, there are problems that it is easy to break, difficult to handle, and lower in yield

Method used

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  • Lamb wave type high frequency device and manufacturing method thereof
  • Lamb wave type high frequency device and manufacturing method thereof
  • Lamb wave type high frequency device and manufacturing method thereof

Examples

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Embodiment approach 1

[0060] 1 and 2 show a Lamb wave type high-frequency device according to Embodiment 1. FIG. 1 is a perspective view thereof, and FIG. 2 is a cross-sectional view schematically showing the A-A section in FIG. 1. In FIG. 1, the Lamb wave type high frequency device 10 is constructed by bonding a piezoelectric substrate 20 and a reinforcing substrate 50.

[0061] The piezoelectric substrate 20 is a thin plate of the same thickness made of a quartz substrate. IDT electrodes 30 made of comb-shaped aluminum are formed on one main surface, and a pair of reflections are formed on both sides of the IDT electrode 30 in the direction of travel of the Lamb waves.器41,42. The IDT electrode 30 has an IN / OUT electrode 31 and a GND electrode 32. The IN / OUT electrode 31 has a plurality of electrode fingers 31a and a bus bar 31b connecting the electrode fingers 31a. The GND electrode 32 has a plurality of electrode fingers 32a and a bus bar 32b connecting the electrode fingers 32a. In addition, the el...

Embodiment approach 2

[0077] Hereinafter, Embodiment 2 of the present invention will be described with reference to the drawings. The aforementioned Embodiment 1 (refer to FIG. 2) is provided with a recess on the side of the reinforcing substrate, while the feature of Embodiment 2 is that it is provided on the side of the piezoelectric substrate. Therefore, the difference from Embodiment 1 will be mainly explained.

[0078] FIG. 4 is a cross-sectional view schematically showing the Ram wave type high-frequency device 10 according to the second embodiment. In FIG. 4, the piezoelectric substrate 20 has an IDT electrode 30 and reflectors 41, 42 formed on one main surface (front surface), and a box-shaped recess 23 is formed on the other main surface (rear surface).

[0079] The bottom thickness H of the recess 23 is set so that the relationship with the wavelength λ of the Lamb wave is in the range of 0<2H / λ≦10. A rim 21 is formed around the recess 23, and the bonding surface 22 of the upper surface (lowe...

Embodiment approach 3

[0082] Hereinafter, a Ram wave type high-frequency device according to Embodiment 3 of the present invention will be described with reference to the drawings. The aforementioned Embodiment 1 (refer to FIG. 2) is provided with a box-shaped recess for forming a space on the reinforcing substrate, while the feature of Embodiment 3 is that a groove-shaped recess is provided. Therefore, the difference is mainly explained.

[0083] FIG. 5 is a perspective view schematically showing the Ram wave type high-frequency device 110 according to the third embodiment.

[0084] A groove-shaped (approximately “”-shaped in front view) recess 153 is formed on the reinforcing substrate 150. The recess 153 is formed to cross the reinforcing substrate 150, so the lateral sides in the width direction are open, and edges 151 are provided on both sides in the longitudinal direction. In addition, on the bonding surface 152 of the upper surface of the edge portion 151, the piezoelectric substrate 20 and th...

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Abstract

A Lamb wave type high frequency device comprises: a piezoelectric substrate (20); an interdigital transducer (IDT) electrode (30) formed on a first main surface of the piezoelectric substrate; a reinforcing substrate (50) connected to a second main surface of the piezoelectric substrate; a space portion (54) formed in one of the piezoelectric substrate and the reinforcing substrate, an area of the space portion being larger than a region in which a Lamb wave is propagated; and a connecting surface (52) formed in a periphery of the space portion.

Description

Technical field [0001] The present invention relates to a ram wave type high frequency device and a manufacturing method of the ram wave type high frequency device. Specifically, it relates to a Lamb wave type high frequency device formed by bonding a reinforcing substrate to a piezoelectric substrate having IDT electrodes, and a method of manufacturing the same. Background technique [0002] In the past, as representative examples of high-frequency resonators, there are surface acoustic wave elements that use Rayleigh waves, leaky waves, and SH waves, and those that use volumetric waves, that is, Lamb waves. Ram wave element. [0003] For example, in a known Rayleigh wave surface acoustic wave element, an IDT electrode is formed in the Z'axis direction on the surface of a quartz substrate called ST cut quartz (for example, refer to Non-Patent Document 1). [0004] In addition, a known SH-wave surface acoustic wave element transmits a transverse wave that shifts the propagation d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/25H03H9/10H01L41/083H10N30/50
Inventor 田中悟
Owner SEIKO EPSON CORP
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