Manufacture method of (110) orientation ferroelectric thin film on Si baseplate
A ferroelectric thin film and substrate technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problem of low orientation degree of ferroelectric thin film, poor adhesion, and the inability to realize the integration of sensor part and Si integrated circuit, etc. problems, to achieve the effect of easy control of growth process parameters, good consistency, and superior dielectric properties
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Embodiment 1
[0031] Lanthanum nitrate (La(NO) with a purity greater than 99% 3 ).5H 2 O) Dissolved in methoxyethanol, nickel acetate [Ni(CH) with a purity greater than 99% 3 COO) 2 4H 2 O] Add methoxyethanol, and add aminoethanol to catalyze the dissolution. The molar ratio of lanthanum nitrate and nickel acetate is 1:1. After mixing, it can be used as the precursor solution for preparing LNO after being stirred by a magnetic stirrer for 24 hours. Then the film is prepared by the glue-spinning method. The amorphous film is first dried at 150°C for 5 minutes, then calcined at 350°C for 5 minutes, and finally sintered in a rapid annealing furnace at 750°C for 5 minutes. The thickness of the single-layer film is about 20nm. These processes were repeated five times to obtain a highly (100) oriented LNO film with a thickness of about 100 nm. Then LNO / SiO 2 / Si substrate is installed in the magnetron sputtering furnace, and the vacuum degree reaches 8×10 -5 At Pa, start to heat up. When ...
Embodiment 2
[0033] Lanthanum nitrate (La(NO) with a purity greater than 99% 3 ).5H 2 O) Dissolved in methoxyethanol, nickel acetate [Ni(CH) with a purity greater than 99% 3 COO) 2 4H 2 O] Add methoxyethanol, and add aminoethanol to catalyze the dissolution. The molar ratio of lanthanum nitrate and nickel acetate is 1:1. After mixing, it can be used as the precursor solution for preparing LNO after being stirred by a magnetic stirrer for 24 hours. Then the film was prepared by the glue-spinning method. The amorphous film was first dried at 150°C for 5 minutes, then calcined at 350°C for 5 minutes, and finally sintered at 750°C for 5 minutes in a rapid annealing furnace. The thickness of the single-layer film was About 20nm. These processes were repeated five times to obtain a highly (100) oriented LNO film with a thickness of about 100 nm. Then LNO / SiO 2 / Si substrate is installed in the magnetron sputtering furnace, and the vacuum degree reaches 4×10 -5 After Pa, start to heat up...
Embodiment 3
[0035] SiO 2 / Si substrate is installed in the magnetron sputtering furnace for oxides, and the vacuum degree is brought to 7×10 -5 After Pa, the temperature starts to rise, and when the substrate temperature reaches 600°C, Ar and O are filled. 2 gas, where Ar and O 2 The volume ratio was 3:1, the vacuum was controlled at 0.5 Pa, kept for 10 minutes, and then the sputtering of the LNO layer was started. The energy density used for sputtering is 0.3w / cm 2 , the sputtering time is 20 minutes, and finally a (100)-oriented LNO bonding layer with a thickness of about 100 nm can be obtained. Then LNO / SiO 2 The / S substrate is installed in a magnetron sputtering furnace for non-oxide, and the vacuum degree reaches 7×10 -5 After the Pa is above, the temperature starts to rise, and when the substrate temperature reaches 500°C, Ar and O are filled. 2 gas, where Ar and O 2 The volume ratio of the Pt layer was 4:1, the vacuum degree was controlled at 0.5 Pa, and kept for 10 minutes...
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