Gallium-nitride metal organic-matter chemical gas-phase depositing apparatus for super-high vertical reactor
A technology of chemical vapor deposition and vertical reactor, applied in chemical instruments and methods, from chemical reactive gas, gaseous chemical plating, etc., can solve the trouble of loading and unloading, limited aluminum components, and wafer Poor uniformity of epitaxial growth and other problems, to achieve the effect of convenient disassembly and cleaning, low cost, convenient loading and unloading
Inactive Publication Date: 2007-11-14
MAANSHAN JASON SEMICON CO LTD
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[0012] The invention provides a gallium nitride metal-organic vapor deposition method equipment with an ultra-high vertical reactor, which can solve the problems in the prior art that the aluminum component of the growth material is limited, and the uniformity of the epitaxial growth of the wafer is relatively low. Poor, problems such as loading and unloading film
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[0040] See Figure 4, Figure 5 and Figure 6,
[0041] The gallium nitride metal-organic vapor deposition method equipment of the ultra-high vertical reactor of the present invention mainly consists of:
[0042] ①Top air chamber; ②Reactor, ③Reactor base and ④Transmission mechanism.
[0043] Details are given below respectively.
[0044] ①Top air chamber: mainly includes gas mixing chamber 1-5; upper pipe seat 1-6; top sealing seat and infrared thermometer 1-7;
[0045] NH 3Gas and MO gas respectively enter the top into the gas mixing chamber 1-5 from the inlet pipe 1-1, through the lower seat of the gas joint 1-2, and the upper seat of the gas joint 1-3. The bottom of the gas mixing chamber 1-5 has many apertures, and the mixed gas flows from these apertures to the reaction chamber 2-11 below; The heat radiation generated will increase the temperature of the gas mixing chamber, and the upper pipe seat 1-6 is equipped with a water cooling chamber, which is used to reduce the ...
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The present invention provides a high vertical reactor GaN metal-organic chemical vapor deposition method equipment, which can solve the existing technologies of the growth of high-alumina materials group were limited, and other issues. The invention of the technology programme, which covers the reactor tube the ratio of D / H in between 0.16 -0.5. Because of the high degree of control and a significant increase compared with the existing technology, the gas from heating vents in the graphite blocks from the extended response from indoor heating can be avoided in the high temperature thermal radiation, which can epitomical growth of high-alumina group GaN materials, experiments show that the growth of the group Al materials up to 85%.
Description
technical field [0001] The invention relates to optoelectronics and microelectronics technology, in particular to epitaxial growth equipment of gallium nitride-based metal-organic vapor deposition method. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD for short) is the most advanced electronic thin film material preparation method in the world. It is a new technology for the preparation of compound semiconductor thin sheet single crystals proposed by Rockwell Corporation of the United States in 1968. This technology uses organic compounds of group III and group II elements and hydrides of group V and VI elements as Growth of source materials, vapor phase epitaxy on the substrate by thermal decomposition reaction, growth of III-V, II-VI compound semiconductors and their multi-component solid solution thin films. [0003] After the development from the 1970s to the 1980s, in the 1990s, it has become the core growth technology for the preparation ...
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IPC IPC(8): C30B25/00C23C16/00
Inventor 张国华
Owner MAANSHAN JASON SEMICON CO LTD