Making method of CMOS part

Abstract

A method for fabricating a complementary metal oxide semiconductor device includes that a semiconductor substrate is provided; N wells and P wells are formed on the semiconductor substrate; an oxide layer is formed on the semiconductor substrate; the N wells and the P wells are doped in the first stage; the N wells and the P wells are doped in the second stage; in the region of N wells and P wells, a gate cathode, a source cathode, a drain cathode and a interconnection layer are formed. With the invention utilizing different energies, the trenched regions are successively doped to change the threshold voltage, reducing the technique processes, saving the cost and shortening the fabrication cycle.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a complementary metal oxide semiconductor device. Background technique [0002] Complementary metal oxide semiconductor devices are widely used in computer and communication fields due to their low voltage, low power consumption, and high integration. Chinese patent application number 200510069668.2 discloses a complementary metal oxide semiconductor device and a manufacturing method thereof. Complementary metal oxide semiconductor devices integrate N-type metal oxide semiconductor transistors (NMOS) and P-type metal oxide semiconductor transistors (PMOS) on the same integrated circuit. Due to the different working modes of NMOS and PMOS, the threshold voltage adjustment need to be done separately. 1A to 1F are the manufacturing methods of complementary metal oxides in the prior art. As shown in FIG. 1A , firstly, a P-type semicond...

AI Technical Summary

Problems solved by technology

[0003] In the manufacture of complementary metal oxide transistors in the prior art, when adjusting the threshold voltage, it is first necessary to define the P-well area by photolithography to pre-dope the P-well, then remove the photoresist, and then perform simultaneous N-well Doping with P-well increases additional photolithography steps, and the semiconductor body substrate needs to enter the ion implantation equipment twice, which increases the complexity of the process, prolongs the product production cycle and increases the cost

Images