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Method for driving solid-state image pickup device, and solid-state image pickup device

A technology of a solid-state imaging device and a driving method, applied in image communication, parts of color TV, parts of TV system, etc.

Inactive Publication Date: 2008-02-13
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, no output pixel signal

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  • Method for driving solid-state image pickup device, and solid-state image pickup device
  • Method for driving solid-state image pickup device, and solid-state image pickup device
  • Method for driving solid-state image pickup device, and solid-state image pickup device

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Embodiment Construction

[0045] Embodiments of a method for driving a solid-state imaging device according to the present invention will be described below with reference to the drawings.

[0046] [1] Structure of solid-state imaging device

[0047] First, the structure of the MOS solid-state programmer will be described below based on this embodiment. The solid-state imaging device according to this embodiment is basically the same in structure as the solid-state imaging device according to the related art explained above.

[0048] FIG. 3 is a circuit diagram of the main structure of the solid-state imaging device according to the embodiment. As shown in FIG. 3 , the solid-state imaging device 3 is composed of a row scanning circuit, a load circuit, an imaging unit, a signal processing unit, and a column scanning circuit.

[0049] The imaging unit is composed of a plurality of pixel units 30 arranged in a two-dimensional array and outputs pixel signals to the signal processing unit via respective o...

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Abstract

In a MOS type solid-state image pickup device, in an nth row pixel cell, a reset pulse to be inputted to a gate electrode of a reset transistor is permitted to be at a potential (Hi) to reset a signal charge held in a charge holding section (305). In such status, when a reference voltage source (VDDCELL) is permitted to be at a potential (Lo), the reset pulse (n) becomes closer to the potential (Lo) by a coupling capacitor (308). Then, after the reset pulse (n) is returned to the potential (Hi), the reset pulse (n) is permitted to be at the potential (Lo).

Description

technical field [0001] The present invention relates to a driving method for a solid-state imaging device, and also relates to a solid-state imaging device. In particular, the present invention relates to a technique for suppressing reduction in dynamic range of a MOS (Metal Oxide Semiconductor) solid-state imaging device with reduced size and increased pixel density. Background technique [0002] In recent years, CCD and MOS are two types of solid-state imaging devices that have been increasingly developed. In particular, MOS solid-state imaging devices appear to be more promising due to their numerous advantages of high sensitivity and low power consumption. [0003] The following is a brief description of the MOS solid-state imaging device (for example, refer to Patent Document 1). [0004] FIG. 1 is a circuit diagram showing a main structure of a MOS solid-state imaging device according to the state of the art. As shown in FIG. 1 , a solid-state imaging device 1 inclu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/335H04N25/00
CPCH04N3/155H04N5/355H04N5/335H04N25/57H04N25/617H04N25/00H04N25/709H04N25/766H04N25/76
Inventor 石本久人植田敦根崎慎介
Owner PANASONIC CORP