Method for forming micro-pattern in a semiconductor device

Abstract

A method of forming a micro-pattern in a semiconductor device that is less than approximately 130 nm using the KrF exposure equipment. A method of forming a micro-pattern in a semiconductor device includes at least one of the following steps: Forming an etching layer, a hard mask layer, an organic bottom anti-reflection (BARC) layer, and / or a photoresist film on and / or over a semiconductor substrate. Forming a photoresist pattern by exposing and developing the photoresist film. Forming a BARC layer pattern using the photoresist pattern as a mask. Forming a hard mask layer pattern using the BARC layer pattern as an etch mask. Forming an etching layer pattern by using the hard mask layer pattern as an etch mask.

Description

technical field [0001] The present invention relates to a method of forming a micropattern in a semiconductor device. Background technique [0002] Certain aspects of semiconductor technology have focused on increasing the integration of semiconductor devices (eg, achieving smaller sized devices). As part of the development of semiconductor technology, micropatterning technology has also been developed. In addition, the process of forming a film pattern of a photoresist plays an important role in various manufacturing processes of some semiconductor devices. [0003] As semiconductor devices become more integrated, the minimum size of patterns is also decreasing. In some applications, the required pattern size may be smaller than the resolving power of the exposure equipment. Therefore, it is necessary to use an apparatus with a relatively high resolution light source to form a micropattern with a relatively small size. For example, a KrF exposure apparatus with a wavele...

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Problems solved by technology

Unfortunately, BARC7 is relatively difficult to dissolve in the alkaline developing solutions used to dissolve photoresists in photolithography

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