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Polishing composition and polishing process

A technology of composition and grinding speed, which is applied in the direction of polishing composition containing abrasives, chemical instruments and methods, grinding devices, etc., and can solve problems such as inability to grind tungsten films

Inactive Publication Date: 2008-07-16
FUJIMI INCORPORATED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the polishing composition of Patent Document 1 is used for polishing, the problem of iron contamination of the wafer caused by iron ions in the polishing composition cannot be avoided.
In addition, in the polishing composition of Patent Document 1, the tungsten film cannot be selectively polished with respect to the silicon oxide film.

Method used

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  • Polishing composition and polishing process

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Embodiment Construction

[0011] One embodiment of the present invention is described below.

[0012] The polishing composition of the present embodiment is prepared by mixing colloidal silicon dioxide and hydrogen peroxide with water, preferably with a pH regulator, so that the pH is 5 to 8.5, and the concentration of iron ions in the polishing composition is 0.02 ppm or less. . Therefore, the polishing composition contains colloidal silica, hydrogen peroxide and water, and preferably further contains a pH adjuster.

[0013] This polishing composition is used for polishing a wafer containing tungsten. More specifically, it is used for polishing a wafer having a tungsten pattern on which a tungsten plug is to be formed, especially for polishing a tungsten film selectively with respect to a silicon oxide film.

[0014] The above-mentioned colloidal silica has the effect of selectively mechanically polishing the tungsten film relative to the silicon oxide film in the pH range of 5 to 8.5, and exerts th...

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PUM

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Abstract

The present invention provides a polishing composition more suitable for polishing wafers containing tungsten, and a polishing method using the polishing composition. The polishing composition of the present invention contains colloidal silica and hydrogen peroxide. The pH of the polishing composition is 5 to 8.5, and the iron ion concentration in the polishing composition is 0.02 ppm or less. The polishing composition preferably further contains phosphoric acid or a phosphate salt.

Description

technical field [0001] The present invention relates to a polishing composition mainly used for grinding a wafer containing tungsten, more specifically, a wafer having a tungsten pattern to be formed into a tungsten plug, and the use of the polishing composition. The grinding method of the composition. Background technique [0002] Patent Document 1 discloses a polishing composition containing an oxidizing agent such as hydrogen peroxide, an iron catalyst such as ferric nitrate, and abrasive grains such as silica as a polishing composition used for polishing wafers containing tungsten. However, when polishing is performed using the polishing composition of Patent Document 1, the problem of iron contamination of the wafer by iron ions in the polishing composition cannot be avoided. In addition, in the polishing composition of Patent Document 1, the tungsten film cannot be selectively polished with respect to the silicon oxide film. [0003] [Patent Document 1] Japanese Pate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14H01L21/304B24B37/00
CPCC09G1/02H01L21/3212C09K3/14
Inventor 河村笃纪佐藤英行服部雅幸
Owner FUJIMI INCORPORATED