Connection method for chip and bearer
A bonding method and carrier technology, applied in the field of bonding, can solve problems such as electrical short circuit of pads, and achieve the effect of reducing the possibility of electrical short circuit
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no. 1 example
[0030] 1A to 1C are cross-sectional views of a bonding method of a chip and a carrier according to a first embodiment of the present invention. Please refer to FIG. 1A , the bonding method of the chip and the carrier in this embodiment includes the following steps. First, a wafer 10 is provided, and the wafer 10 has a plurality of pads 120 and a plurality of bumps 130 respectively disposed on the pads. The bumps 130 may be gold bumps, tin bumps or wire bonding bumps, wherein the wire bonding bumps are formed by wire bonding techniques. In this embodiment, the bumps 130 are gold bumps.
[0031] Please continue to refer to FIG. 1A, a two-level adhesive layer 140a is formed on the wafer 10 to cover the bumps 130, wherein the method for forming the two-level adhesive layer 140a includes a spin-coating process or a printing process. . In more detail, the adhesive layer 140a is in a liquid state at the stage A for easy coating on the wafer 10 , is partially cured and semi-solid a...
no. 2 example
[0036] 2A to 2C are cross-sectional views of a bonding method of a chip and a carrier according to a second embodiment of the present invention. Please refer to FIG. 2A , this embodiment is similar to the first embodiment, the difference is that an indium layer 150 is firstly formed on the bump 130 before forming the adhesive layer 140 a with two-level characteristics.
[0037] Referring to FIGS. 2B and 2C , a tin layer 230 is formed on the contact 220 . Then, through a bonding process S100 , the contacts 220 of the carrier 200 and the bumps 130 of the chip 110 are bonded. In this embodiment, the bonding process S100 is a thermocompression bonding process. So far, the bonding between the carrier 200 and the chip 110 has been completed. However, in order to save the process time, preferably, a curing process may also be performed after the bonding process S100 , so as to speed up the complete curing of the adhesive layer into the C-stage adhesive layer 140c.
no. 3 example
[0039] 3A to 3C are cross-sectional views of a bonding method of a chip and a carrier according to a third embodiment of the present invention. Please refer to FIG. 3A . The content shown in FIG. 3A is the same as that shown in FIG. 1A .
[0040] Please refer to FIG. 3B , this embodiment is similar to the first embodiment, except that an indium layer 240 is formed on the tin layer 230 .
[0041] Please refer to FIG. 3B and FIG. 3C , and then, a bonding process S100 is performed to bond the contacts 220 of the carrier 200 and the bumps 130 of the chip 110 . In addition, in order to save the process time, preferably, a curing process may also be performed after the bonding process S100, so as to speed up the complete curing of the adhesive layer into the C-stage adhesive layer 140c.
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