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Semiconductor device and method for manufacturing the same

A semiconductor and device technology, applied in the field of semiconductor devices, can solve problems such as increased leakage current and achieve the effect of preventing etching

Active Publication Date: 2013-03-06
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For this reason, as shown in, for example, Japanese Patent Application Laid-Open No. 2003-282740, a problem arises that leakage current increases in the edge portion of the active region of the transistor.

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] (1) Preliminary description

[0018] Before describing the preferred embodiment, a preliminary description will be given below.

[0019] Figure 1A to Figure 1V is a cross-sectional view of a semiconductor device fabricated according to preliminary instructions, and Figure 2A to Figure 2G is its floor plan.

[0020] This semiconductor device is a logic embedded nonvolatile memory provided with flash memory cells and peripheral transistors. Such as Figure 1A As shown, this semiconductor device has a cell region A and a peripheral circuit region B.

[0021] In order to manufacture the above-mentioned semiconductor devices, such as Figure 1A As shown, first, a device isolation trench 1a is formed in a silicon (semiconductor) substrate 1, and a device isolation insulating film 2 made of a silicon oxide film or the like is embedded in the device isolation trench 1a.

[0022] Thereafter, a first P-well 3 and a second P-well 4 are formed in the cell region A and the pe...

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Abstract

A method for manufacturing a semiconductor device including the steps of forming a flash memory cell (FL) provided with a floating gate (8a), an intermediate insulating film (12), and a control gate (16a), forming first and second impurity diffusion regions (24a, 24b), thermally oxidizing surfaces of a silicon substrate (1) and the floating gate (8a), etching a tunnel insulating film in a partial region (PR) through a window (39b) of a resist pattern (39); forming a metal silicide layer (40) on the first impurity diffusion region (24a) in the partial region (PR), forming an interlayer insulating film (43) covering the flash memory cell (FL), and forming, in a first hole (43a) of the interlayer insulating film (43), a conductive plug (44) connected to the metal silicide layer (40).

Description

technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. Background technique [0002] In a semiconductor device such as an LSI, an impurity diffusion region (eg, source / drain regions) is formed in a surface layer of a semiconductor substrate, and a thermal oxide film is formed on the impurity diffusion region as a gate insulating film. At this time, the growth speed of the thermal oxide film tends to increase as the impurity concentration of the impurity diffusion region becomes higher. This phenomenon is called accelerated oxidation. [0003] The concentration of the impurity diffusion region formed in the semiconductor substrate is optimized according to the role played by the impurity diffusion region. Thus, a plurality of impurity diffusion regions in one chip rarely have the same concentration. Usually, the concentrations of the impurity diffusion regions are different from each other. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L23/522H01L21/8247H01L21/768H10B69/00
CPCG11C16/0433H01L29/66825H01L27/105H01L27/0207H01L21/31662H01L21/31144H01L27/11517H01L27/11529H01L29/7883H01L21/3165H01L27/11526H01L21/28518H01L21/02129H01L21/0217H01L21/02164H01L21/02238H01L21/02274H01L21/02255H01L21/022H10B41/41H10B41/40H01L21/28052H10B41/00
Inventor 山田哲也
Owner FUJITSU LTD