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Method for manufacturing semiconductor device

一种制造方法、半导体的技术，应用在半导体/固态器件制造、半导体器件、制造微观结构装置等方向，能够解决半导体器件特性劣化、半导体器件不能发挥正常的功能等问题，达到防止溶解的效果

Inactive Publication Date: 2008-09-17
OKI ELECTRIC IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The dissolution of the conductive film may cause deterioration of the characteristics of the semiconductor device or the failure of the semiconductor device to perform normal functions.

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0021] Below, while referring to the attached Figure 1 Embodiments of the present invention will be described in detail.

[0022] figure 1 is a perspective view showing the structure of the piezoresistive three-axis acceleration sensor 10, figure 2 is a plan view showing the structure of the piezoelectric resistance type three-axis acceleration sensor 10, figure 2 (a) is a top view, figure 2 (b) to indicate along figure 2 Cross-sectional view of the cross-section at the dashed-dotted line 2b-2b in (a).

[0023] The piezoresistive three-axis acceleration sensor 10 has a thin square first silicon chip 20 . On the first silicon chip 20, by setting approximately L-shaped through-holes 11 at the four corners of the inner side, the following regions are formed: a frame-shaped peripheral fixing portion 12, a square hammer fixing portion 13 in the center of the inner side, and four Beam 14. Thereby, the peripheral fixing part 12 and the square weight fixing part 13 in the ...

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PUM

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Abstract

A method of manufacturing a semiconductor device includes preparing a semiconductor wafer, forming a semiconductor function element on the semiconductor wafer, drying the semiconductor wafer after forming the semiconductor function element by using an isopropyl alcohol vapor, heating the semiconductor wafer after drying the semiconductor wafer, and performing an RA cleaning on the semiconductor wafer after heating the semiconductor wafer by using a fuming nitric acid.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a technology for removing residues in a heating process. Background technique [0002] In recent years, with the development of miniaturization of semiconductor devices, the contamination of semiconductor wafers caused by tiny particles and trace metals has a direct impact on the reliability and yield of semiconductor devices. Therefore, in the manufacturing process of semiconductor devices, cleaning of semiconductor wafers is one of very important processes. [0003] For the cleaning of semiconductor wafers, the types of pollutants that contaminate semiconductor wafers are different, and the cleaning methods are also different. For example, for the removal of organic matter, an oxidizing acid (H 2 S0 4 etc.), for oxide film residue and natural oxide film, use hydrogen fluoride (HF) aqueous solution. For the removal of particles and metal impurities, ammonia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00G01P15/18H01L21/304H01L29/84
CPCB81C1/00849
Inventor 三木慎介
Owner OKI ELECTRIC IND CO LTD