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Image sensor and method for manufacturing the same

An image sensor and pattern technology, applied in the sensor field, can solve problems such as reducing photosensitivity, and achieve the effect of suppressing crosstalk and noise

Inactive Publication Date: 2008-09-24
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In addition, since a plurality of insulating layers are stacked on the photodiode, the light focused by the microlens is reflected and absorbed at the interface between the insulating layers, thus reducing the photosensitivity
[0011] In addition, light passing through the edge of the microlens does not reach the light-absorbing element, but instead travels to the metal interconnect and pixels adjacent to the light-absorbing element, thereby creating crosstalk between pixels and reducing light sensitivity

Method used

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  • Image sensor and method for manufacturing the same
  • Image sensor and method for manufacturing the same
  • Image sensor and method for manufacturing the same

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Embodiment Construction

[0017] An image sensor and a method of manufacturing the image sensor according to an embodiment of the present invention will be described below with reference to the accompanying drawings.

[0018] In the descriptions of the following embodiments, when it is described that a layer is formed "on / above" another layer, it means that the layer is directly or indirectly (that is, there is another layer interposed) formed "on / above" the other layer. above".

[0019] Image 6 is a cross-sectional view of the image sensor according to the embodiment.

[0020] refer to Image 6 An image sensor according to an embodiment may include a lower interconnect structure 20 having a plurality of lower interconnects 21 formed on a semiconductor substrate 10 having a circuit region (not shown).

[0021] An interlayer dielectric layer 30 including a metal interconnection 31 may be formed on the lower interconnection structure 20 .

[0022] The pixel pattern A may be connected with the metal ...

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Abstract

Disclosed is an image sensor which includes a plurality of pixel patterns formed on corresponding metal interconnections of an interlayer dielectric and a dummy pixel pattern formed between adjacent pixel patterns of the plurality of the pixel patterns. The dummy pixel patterns are not formed connected to the metal interconnections. The dummy pixel patterns can be formed spaced a distance apart from the plurality of pixel patterns such that air gaps form between the dummy pixel patterns and the pixel patterns in an intrinsic layer that is formed on the dummy pixel pattern and the plurality of pixel patterns.

Description

technical field [0001] The present invention relates to sensors, and more particularly to image sensors and methods of manufacturing the same. Background technique [0002] An image sensor is a semiconductor device used to convert an optical image into an electrical signal, and is generally classified into a charge coupled device (CCD) image sensor or a complementary metal oxide silicon (CMOS) image sensor (CIS). [0003] CCDs have various disadvantages, such as complex drive modes and high power consumption. Also, the CCD requires multi-step light processing, so the manufacturing process is complicated. For the above reasons, CIS has attracted much attention in recent years as a next-generation image sensor capable of overcoming the shortcomings of CCDs. [0004] The CIS includes a photodiode and a MOS transistor in each pixel unit, and an electrical signal is sequentially detected by the photodiode and the MOS transistor in a switching mode to recognize an image. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/14609H01L27/14645H01L27/14692H01L27/146
Inventor 李玟炯
Owner DONGBU HITEK CO LTD