Method for producing capacitor

Abstract

The invention relates to a manufacturing method for a capacitor; the` method comprises the following steps: firstly, a substrate is provided; then a first doped dielectric layer and a second dielectric layer which is not doped are formed on the base in sequence; then a plurality of channels are formed and arranged between the first dielectric layer and the second dielectric layer; next, ion implantation technique is carried out at the largest gap between the two adjacent channels, so as to form an implanting area at part of the second dielectric layer of the upper part of the channel; then wet etching technique is carried out so as to remove part of the second dielectric layer positioned at the implanting area and part of the first dielectric layer positioned at the bottom of the channel; then a first conductor layer and an capacitance dielectric layer are formed and arranged at the surface of the channel in sequence; and then a second conductor layer is formed in the channel. The manufacturing method of the invention can increase the surface area of the lower electrode of the capacitor and can also increase the capacitance value; besides, the manufacturing method can expand the width of the upper part and the bottom part of the channel so as to increase the capacitance value of the capacitor, can avoid the short circuit of the adjacent capacitors and is very suitable for practical use.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor element, in particular to a method capable of increasing the surface area of ​​the lower electrode of a capacitor to increase the capacitance value, and simultaneously expanding the width of the upper and bottom of the ditch to increase the capacitance value of the capacitor, and to increase the capacitance value of the capacitor. A method for making a capacitor that avoids short circuits between adjacent capacitors. Background technique [0002] Dynamic random access memory (dynamic random access memory, DRAM, dynamic random access memory, hereinafter referred to as dynamic random access memory) is based on a memory unit (memory unit is a memory cell, hereinafter referred to as a memory unit) The charged state of the internal capacitor is used to store digital signals. The charge storage of a capacitor depends on the capacitance value of the capacitor, and the capacitance value is det...

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Problems solved by technology

[0005] However, when the above wet etching process is performed, it is easy to over-etch the doped dielectric layer at the bottom because the wet etching is performed for too long, so that the thickness of the doped dielectric layer at the bottom between two adjacent trenches is reduced. Too small, resulting in the bottom electrode between two adjacent capacitors being in the doped dielectric layer at the bottom or the junction between the undoped dielectric layer and the doped dielectric layer after the capacitor is formed face short circuit

[0006] This shows that above-mentioned existing capacitor manufacturing method obviously still has inconvenience and defect in method and use, and urgently needs to be further improved

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and the general method has no suitable production method to solve the above-mentioned problems. This is obviously a problem. Issues that relevant industry players are eager to solve

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