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Improved bubbler for the transportation of substances by a carrier gas

A technology for carrying gas and bubbler, applied in gas and gas/steam mixing, gaseous chemical plating, metal material coating process, etc., can solve the problem of reducing the effectiveness of glass frit

Active Publication Date: 2011-06-29
SIGMA ALDRICH CO LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This can lead to interference which reduces the effectiveness of the frit

Method used

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  • Improved bubbler for the transportation of substances by a carrier gas
  • Improved bubbler for the transportation of substances by a carrier gas
  • Improved bubbler for the transportation of substances by a carrier gas

Examples

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Effect test

example 1

[0044] Research uses such as figure 1 Efficiency of the reverse flow bubbler shown, delivering solid trimethylindium in a carrier gas. The bubbler was tested under various conditions and the conditions under which the bubbler gave a stable Epison reading were recorded over time. The data was collected by a Trendview recorder which recorded the pressure at the bubbler, the pressure at the pressure controller and the Epison reading. The data of each flow is recorded continuously within 2 hours. The error of the Epison reading is ±0.005 and the error of the pressure reading is ±3 mbar.

[0045] The 100% fill level of the reverse flow bubbler used was 300 g. 60 g of solid trimethylindium was added to the bubbler so that the bubbler was 20% full, and the bubbler was connected to the Epison kit. A low fill level is used to represent a bubbler approaching the end of its useful life, which, when using conventional bubblers, corresponds to a fill level at which the absorption rate ...

Embodiment 2

[0053] in the attached picture Figure 10 A bubbler according to a second embodiment of the invention is shown. For brevity, the same as about Figures 1 to 2c Like features already described are given the same reference numerals. In addition to being present as above with respect to Figures 1 to 2c In addition to the perforated disc 14 already described, the bubbler is provided with a double chamber 20 , 22 , wherein the inner chamber 22 comprises the dipping legs of the bubbler surrounded by the outer chamber 20 .

[0054] The inner chamber 22 has a wider diameter than conventional chambers. In this regard, the dip legs are typically on the order of 0.25 inches (6.35 mm), whereas the diameter of the inner chamber of the present invention is on the order of 1 inch (25.4 mm). The diameter of the outer chamber is approximately 3.388 inches (86 mm).

[0055] In addition, if Figure 10 As shown, the precursor (eg, TMI) is placed in both the inner and outer chambers. The r...

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Abstract

A bubbler (2) for delivering liquid or solid metalorganic compounds to a reactor site. The bubbler has an inner and outer chamber and has a member (14) positioned between its inlet (6) and outlet (8) that is provided with a plurality of apertures therein. The member (14) is preferably in the form of a perforated disc having a predefined density of apertures therein to provide optimum pick up and flow of carrier gas through the bubbler.

Description

technical field [0001] The present invention relates to an improved bubbler for delivering a substance by a carrier gas, and to a method of delivering a carrier gas permeated with a substance. In particular, the present invention relates to an improved bubbler for delivering metal organic precursors for use in chemical vapor deposition techniques. Background technique [0002] In the semiconductor industry, it is common practice for electronic devices to be produced by chemical vapor deposition (CVD) processes. A liquid or solid precursor is provided in a bubbler through which a carrier gas, such as hydrogen, can be bubbled via a dip tube so that the gas becomes saturated with the precursor. The gas phase mixture of carrier gas / precursor is then fed into the epitaxial reactor at a controlled rate. Such systems are used in the manufacture of silicon and compound semiconductors. It is important that the concentration of the chemical constituents in the gas phase be very sta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/448B01F23/10
CPCC23C16/4481C23C16/4482C23C16/448C23C16/00
Inventor H·坎宁G·威廉姆斯R·奥德拉R·坎乔利亚
Owner SIGMA ALDRICH CO LLC