Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
A technology for semiconductors and devices, applied in the field of manufacturing semiconductor devices and semiconductor devices obtained by using the same, can solve problems such as difficulty in removal
Inactive Publication Date: 2008-11-19
NXP BV
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Problems solved by technology
Since the metal silicide region is not easily etched, it is difficult to remove this region, which leads to the above situation
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[0021] Figure 1 to Figure 9 It is a cross-sectional view of a semiconductor device at different stages in the manufacturing process using the method according to the present invention.
[0022] The semiconductor device manufactured in this example includes a semiconductor element E (for example, a field effect transistor or a bipolar transistor) that can be formed by a usual method. The epitaxial silicon region formed by the method of this example may be, for example, a source / drain contact structure of a field effect transistor, or an emitter region of a bipolar transistor or a collector region of an inverted bipolar transistor. For simplicity, these characteristics of this transistor are not shown in the figure. It can be partially or completely formed before the first relevant step according to the present invention.
[0023] In the first relevant step of manufacturing device 10 (see figure 1 In), the first substrate 11 is a single crystal silicon substrate 11 here, and the ...
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The invention relates to a method of manufacturing a semiconductor device (10) with a substrate (11) and a semiconductor body (12) which is provided with at least one semiconductor element (E) and comprising a monocrystalline silicon (1) region on top of which an epitaxial silicon region (2) is formed by providing a metal silicide region (3) on the monocrystalline silicon region (1) and a low-crystallinity silicon region (4) on top of the metal silicide region (3), after which the low-crystallinity silicon region (4) is transformed by heating into the epitaxial silicon region (2) having a high-crystallinity, during which process the metal silicide region (3) is moved from the bottom of the low-crystallinity silicon region (4) to the top of the epitaxial silicon region (2). According to the invention above the level of the metal silicide region (3) an insulating layer (5) is formed which is provided with an opening (6), the low-crystallinity silicon region (4) is deposited in the opening (6) and on top of the insulating layer (5), the part (4A, 4B) of the low-crystallinity silicon region (4) on top of the insulating layer (5) is removed by a planarization process after which the epitaxial silicon region (2) is formed. In this way an epitaxial silicon region (2), preferably a nano wire (2), is simply obtained that is provided with a metal silicide contact (region) in a self-aligned manner and that can form a part of semiconductor element (E) like a transistor.
Description
Technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, the semiconductor device having a substrate and a semiconductor body, the semiconductor body is provided with at least one semiconductor element, and includes a single crystal silicon region, on the single crystal silicon region, through A metal silicide area is provided on the single crystal silicon area and a low crystallinity silicon area is provided on the metal silicide area to form an epitaxial silicon area. Thereafter, the low crystallinity silicon area is converted into epitaxial silicon with high crystallinity by heating In this process, the metal silicide region is moved from the bottom of the low crystallinity silicon region to the top of the epitaxial silicon region. The present invention also relates to a semiconductor device obtained by this method. The high and low associated with the crystallinity characteristics refer to the degree of crystallinity. [0002] T...
Claims
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IPC IPC(8): H01L21/768
CPCH01L2221/1094H01L21/76889H01L21/28525H01L21/76877
Inventor 维贾亚哈万·马达卡塞拉普拉巴特·阿加瓦尔约翰内斯·J·T·M·东科尔斯马克·范达尔
Owner NXP BV