High-voltage semiconductor device and method of fabricating semiconductor high-voltage device

Abstract

A semiconductor high voltage device comprises; a semiconductor substrate, possessing deep slot; a grid oxide film, forming at side wall of deep slot; a polysilicon layer, forming deep slot and grid oxide film; a partition part, forming on side wall of part of deep slot on grid oxide film. The inventive semiconductor high voltage device can prevent spoilage of grid oxide film during processing andchange of current path such as current leakage between polysilicon upper surface and source / drain.

Description

High-voltage semiconductor device and manufacturing method thereof This application claims priority from Korean Patent Application No. 10-2007-0067070 (filed on July 4, 2007) based on 35 U.S.C. §119 and 35 U.S.C. §365, the entire contents of which are hereby incorporated by reference. technical field The present invention relates to a technique of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device of a vertical structure using a high voltage. Background technique Since high voltage semiconductor devices require high voltages compared to complementary metal oxide semiconductor (CMOS) devices, high voltage semiconductor devices may generally have a vertical structure. For example, in the process of manufacturing CMOS, a voltage of about 1.5V may be used. On the other hand, in the process of manufacturing high voltage devices, a voltage of 10V to 100V, preferably 30V, may be used. In order to achieve the purpose...

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Problems solved by technology

Therefore, the characteristics of the device are degraded, which may cause a problem that the current path changes after the formation of the later source / drain regions

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