Chopped wave test circuit and method for semiconductor power device

A power device and test circuit technology, which is applied in the field of semiconductor power device chopping test circuit, can solve the problems of power device loss, failure of freewheeling diode recovery voltage test, insufficient and other problems, and achieve the effect of reducing impact

Active Publication Date: 2009-01-14
CHINA RAILWAYS CORPORATION +1
View PDF0 Cites 26 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, it is not enough to test the conduction current and cut-off voltage of semiconductor power devices. Modern fast semiconductor power devices require fast diodes as freewheeling diodes. During each turn-on process of semiconductor power devices, freewheeling diodes Switching from the forward conduction to the reverse cut-off state requires the diode to have soft recovery characteristics. With the increase of the switching frequency of the power components in the converter equipment, the working characteristics of the freewheeling diode are getting more and more attention.
[0011] In the prior art, the pulse

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chopped wave test circuit and method for semiconductor power device
  • Chopped wave test circuit and method for semiconductor power device
  • Chopped wave test circuit and method for semiconductor power device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0060] In order to make the above objectives, features and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0061] See Figure 4 , Is a schematic diagram of a chopper test circuit for a semiconductor power device provided by the first embodiment of the present invention.

[0062] In this test circuit, it includes power supply E, supporting capacitor C1, semiconductor power devices IPM1 and IPM2, inductor L, pulse signal generator, drive protection unit and test leads. Among them, the positive pole of power supply E is connected to the positive pole of capacitor C1 and the positive pole of IPM1. Collector, the emitter of IPM1 is connected to the collector of IPM2, the emitter of IPM2 and the negative electrode of capacitor C1 are connected to the negative electrode of power supply E, and the pulse signal generator is connected t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor power apparatus chopped wave test circuit adopting an inductance as a test load. When the recovery voltage of a first semiconductor power apparatus is tested, the inductance is connected with an anode of a power supply; when the recovery voltage of a second semiconductor power apparatus is tested, the inductance is connected with a cathode of the power supply. The invention also discloses a semiconductor power apparatus chopped wave test method including the following steps: when the first semiconductor apparatus is tested, the action of the second semiconductor power apparatus is controlled to get the recovery voltage of the first semiconductor power apparatus; when the second semiconductor power apparatus is tested, the action of the first semiconductor power apparatus is controlled to obtain the recovery voltage of the second semiconductor power apparatus. The test circuit and the test method provided by the invention can realize the effective test to the recovery voltage of a freewheeling diode in the semiconductor power apparatus.

Description

technical field [0001] The invention relates to the semiconductor field, in particular to a semiconductor power device chopping test circuit and method. Background technique [0002] The traction converter in the rail vehicle electrical system refers to the AC-DC-AC converter system for main line electric locomotives, and the DC-AC inverter system for urban subways and light rails. With the development of power electronics technology, their application in rail vehicles is also constantly improving and developing. The semiconductor power devices in these converter systems have experienced the development process from semi-controlled thyristor (SCR), fully controlled thyristor (GTO) to insulated gate bipolar transistor (IGBT). [0003] The insulated gate bipolar transistor IGBT is a composite device, which is combined with a MOSFET tube and a transistor, and is driven by the former. It is a voltage-driven full-control switching device with high pulse switching frequency, goo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R31/26G01R31/28G01R19/00
Inventor 黄长强曹怀志刘长清蹇芳张宁
Owner CHINA RAILWAYS CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products