Unlock instant, AI-driven research and patent intelligence for your innovation.

Light shield mending method

A technology of photomask and repair fluid, applied in optics, originals for photomechanical processing, instruments, etc.

Inactive Publication Date: 2012-04-18
SHENZHEN NEWWAY PHOTOMASK MAKING
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012]1. After the mouth of the quartz catheter is broken, the catheter can only be scrapped, and the scrapping of the catheter also leads to the scrapping of the repair fluid remaining in the catheter, resulting in A lot of waste of quartz catheters and repair fluid;
[0013]2. After the caliber of the quartz tube increases to more than 5 μm, it is difficult to accurately control the repair thickness and repair accuracy, and a lot of repair time is wasted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light shield mending method
  • Light shield mending method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] refer to figure 1 , this figure is a method flowchart of an embodiment of the mask repair method provided by the present invention;

[0029] As shown in the figure, the specific process of repairing the pinholes on the surface of the mask in this embodiment is as follows:

[0030] In step S01, a heating device is used to heat the surface of the pinhole hole to be repaired on the photomask for the first time, and the heating time is 20-30 seconds.

[0031] In step S02, the repair fluid in the quartz catheter is injected into the pinhole cavity by using a nanoscale quartz catheter injection.

[0032] In step S03, a heating device is used to heat the pinhole cavity injected with the repair fluid for a second time, and the heating time is 30-60 seconds to make it dry and shaped.

[0033] In step S04, a heating device is used to heat the pinhole cavity injected with the repair fluid for a third time, and the heating time is 30-60 seconds to achieve the effect of curing th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photomask repairing method, including the following steps that: a heating apparatus is adopted to carry out a first time heating for 20-30sec for a surface of a needle hole on the photo mask to be repaired; a nano-quartz duct is adopted to inject a repair liquid into the needle hole; the heating apparatus is adopted to carry out a second time heating for 30-60sec for the needle hole injected with the repairing liquid; and a heating apparatus is adopted to carry out a third time heating for 30-60sec for the needle hole, wherein during above each heating, the heating temperature is 450-500 DEG C, the distance between the heating apparatus and the needle hole is 2-5cm. The method avoids the waste of the duct and repairing liquid and can accurately control the repair accuracy and thickness, thereby largely reducing the repair time.

Description

technical field [0001] The invention relates to a photomask manufacturing technology, in particular to a method for repairing pinholes generated during the photomask manufacturing process. Background technique [0002] As a medium for exposing transparent / opaque images on photoresist, the photomask contains high-precision circuit images inside. The material of the photomask mainly includes glass substrate, chrome (Cr) layer, chromium oxide layer, photoresist wait. [0003] With the rapid development of semiconductor / liquid crystal display technology, as an important part of semiconductor and liquid crystal display, the demand for photomasks in the market is increasing, and the requirements for the accuracy and various performance indicators of photomasks are also increasing. come higher. Especially in semiconductor manufacturing, as the precision requirements for semiconductors increase from the micron level to the nanometer level, the precision requirements for the mask a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/00G03F1/68G03F1/72
Inventor 杜武兵瞿照地
Owner SHENZHEN NEWWAY PHOTOMASK MAKING