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LED semiconductor body and use of an lED semiconductor body

A technology of semiconductor and body, which is applied in the application field of LED semiconductor body and LED semiconductor body, and can solve problems such as shortening the life of LED semiconductor body

Active Publication Date: 2009-01-21
OSRAM OPTO SEMICON GMBH & CO OHG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the current density in the active layer should not exceed the maximum current density depending on the respective material system used, otherwise there is the risk of excessive aging effects shortening the lifetime of the LED semiconductor body

Method used

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  • LED semiconductor body and use of an lED semiconductor body
  • LED semiconductor body and use of an lED semiconductor body
  • LED semiconductor body and use of an lED semiconductor body

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Embodiment Construction

[0050] figure 1 The LED semiconductor body 1 shown in the first exemplary embodiment has a first radiation-generating active layer 2 and a second radiation-generating active layer 3, wherein the active layers are in the vertical direction, that is to say perpendicular to the main direction of extension of the active layers set on top of each other. Between the active layers 2, 3 a tunnel junction 4 is formed, which tunnel junction is formed by means of a first semiconductor layer 5 of a first conductivity type, such as an n-conduction semiconductor layer, and a second semiconductor layer 6 of a second conductivity type, such as a p-conduction The semiconductor layer is formed. Preferably, the two semiconductor layers 5 , 6 are highly doped in order to form a more efficient tunnel junction with a low junction resistance during operation.

[0051] By arranging two active layers in one LED semiconductor body, the total radiation dose generated is advantageously increased. Sin...

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Abstract

A description is given of an LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, wherein the first and second active layer are arranged one above another in a vertical direction.

Description

technical field [0001] The invention relates to an LED semiconductor body and an application of the LED semiconductor body. Background technique [0002] This patent application claims priority from German patent application 102005063105.3 and German patent application 102006039369.4, the disclosures of which are hereby incorporated by reference. [0003] Conventional LED semiconductor bodies generally have a layer structure with pn junctions. In the region of this pn junction there is the active layer of the LED, in which radiation is generated during operation. The amount of radiation produced depends on the current intensity with which the LED semiconductor body is driven. [0004] However, the current density in the active layer should not exceed the maximum current density depending on the respective material system used, otherwise there is the risk of excessive aging effects shortening the lifetime of the LED semiconductor body. Contents of the invention [0005] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/08
CPCH01L2924/0002H01L33/0016H01L33/08H01L25/0756H01L33/46H01L2924/00
Inventor R·温迪什G·格罗宁格P·海德伯恩C·琼W·格莱特
Owner OSRAM OPTO SEMICON GMBH & CO OHG