Preparation of nano-scale phase-changing memory cell array

Abstract

The invention relates to a preparation method of a nanometer phase change memory cell array, and belongs to the technical field of micro- / nano- electronics. The preparation method is characterized by the following steps: preparing an inverted cone-shaped nanometer phase change memory cell multistep concave hole array, wherein the conical tip is in a nanometer scale; and filling the inverted cone with a specific phase-change material, a transition material and an electrode material, so as to obtain the nanometer phase change memory cell array. The preparation method can effectively reduce the contact area of the phase-change material and the electrode material, and smartly replace the commonly used double-exposure etching process in the prior art with one-exposure etching process, thereby resulting in a simple process. The method simplifies the preparation process of the nanometer multilayer cell structure, solves the etching problem of the nanometer phase change memory cell multilayerstructure, and has the advantages of high processing precision, low cost, applicability to industrial production, and suitability for preparation of low-power and high-density phase change memory devices.

Description

technical field [0001] The invention relates to a method for preparing a nanoscale phase-change memory cell array, which belongs to the field of micro-nano electronics. technical background [0002] Phase change memory (PCRAM) is a new type of memory device that uses the characteristics of phase change materials to have different resistance values ​​in the amorphous and polycrystalline states to realize signal storage. PCRAM has the advantages of small size, low driving voltage, low power consumption, Compared with the currently commonly used flash memory (FLASH), dynamic random access memory (DRAM) and iron point memory (FeRAM), it has obvious competitive advantages, and has high and low temperature resistance, radiation resistance, and Therefore, PCRAM will have broad application prospects both in the civilian field and in the national defense field, and become a research and development hotspot. [0003] However, a major problem facing the development of phase-change mem...

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Problems solved by technology

[0003] However, one of the main problems facing the research and development of phase change memory at present is how to further reduce its operating current. Reducing the operating current is conducive to reducing power consumption and matching with the current CMOS process.

[0004] In this regard, the industry has proposed a variety of solutions to reduce the working current by reducing the electrode points and the structure of the phase-change memory cell, but the preparation method mainly uses traditional photolithography technology, which has complex processes and high processing costs.

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