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Methods of forming films of a semiconductor device

A semiconductor and device technology, applied in the field of thin film formation, can solve the problems of complex application of large wafers, etc.

Inactive Publication Date: 2009-02-18
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the electrochemical deposition (ECD) process is a method of depositing a metal layer using an external power source, it has disadvantages in that it is difficult to apply it to a large wafer due to voltage drop and due to the need for A good seed layer complicates the process

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  • Methods of forming films of a semiconductor device
  • Methods of forming films of a semiconductor device
  • Methods of forming films of a semiconductor device

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Embodiment Construction

[0012] The present invention will be described more fully hereinafter with reference to the accompanying drawings that illustrate embodiments of the invention. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions are exaggerated for clarity. Like reference numerals refer to like elements throughout the specification

[0013] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there a...

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Abstract

There is provided a method of forming a film of a semiconductor device. The method includes a step of adsorbing a liquefied metal ion source on the substrate; rinsing the substrate to remove any liquefied metal ion source that is not adsorbed to the substrate; depositing a metal layer on the substrate by reducing the liquefied metal ion source that is adsorbed on the substrate with a liquefied reducing agent; and rinsing the substrate to remove the remaining liquefied reducing agent and any reaction residual.

Description

technical field [0001] The present invention disclosed herein relates to a method for forming a thin film of a semiconductor device, and more particularly, to a method for forming a thin film of a semiconductor device by using an electroless plating process. Background technique [0002] Generally speaking, the thin film of semiconductor device can adopt one of chemical vapor deposition (CVD, chemical vapor deposition) process, physical vapor deposition (PVD, physical vapor deposition) process, electrochemical deposition (ECD, electrochemical deposition) process and electroless plating process. process to form. Electrochemical deposition (ECD) processes can obtain metal layers that contain relatively small amounts of impurities and have relatively good properties compared to other processes. However, since the electrochemical deposition (ECD) process is a method of depositing a metal layer using an external power source, it has disadvantages in that it is difficult to apply...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/288H01L21/3205H01L21/321H01L21/768
CPCH01L21/288C23C18/31C23C18/1879H01L21/76849C23C18/30C23C18/1658C23C18/1689H01L21/20
Inventor 尹钟皓崔吉铉李钟鸣
Owner SAMSUNG ELECTRONICS CO LTD