Electrostatic coatings and articles comprising polythiophenes
A technology for polythiophene, products, applied in coatings, conductive coatings, transportation and packaging, etc., can solve problems such as low conductivity, low ICP load level, limited light transmittance, etc.
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Embodiment 1A
[0056] Formulation of ESD Coatings
[0057] 60 mg of Plexcore MP (a soluble regioregular polythiophene purchased from Plextronics, Pittsburgh, PA) was dissolved in 7.44 g of DMF by heating and stirring. The solution was stirred vigorously for 30 minutes. 57 mg of p-toluenesulfonic acid were added and the solution was stirred vigorously for a further 30 minutes. 210 mg poly(4-vinylpyridine) was dissolved in 7.23 g DMF and stirred vigorously for 30 minutes. The two solutions were combined and stirred vigorously for 30 minutes. Pass the solution through a 0.45 micron syringe filter. 17 mg of dichlorodihydroquinone dissolved in 0.1 ml of DMF was injected into the mixture by syringe.
Embodiment 1B
[0059] Formulation of ESD Coatings
[0060] 60 mg of soluble regioregular polythiophene was dissolved in 7.44 g of DMF by heating and stirring. The solution was stirred vigorously for 30 minutes. 44 mg of p-toluenesulfonic acid were added and the solution was stirred vigorously for a further 30 minutes. 210 mg poly(4-vinylpyridine) was dissolved in 7.25 g DMF and stirred vigorously for 30 minutes. The two solutions were combined and stirred vigorously for 30 minutes. Pass the solution through a 0.45 micron syringe filter. 13 mg of dichlorodihydroquinone dissolved in 0.1 ml of DMF was injected into the mixture by syringe.
Embodiment 2
[0062] Application of paint
[0063] Films were prepared by spin casting on ozone-treated glass substrates. The film was spun at 350 rpm for 5 seconds to spread and 2000 rpm for 60 seconds to thin using a 1275 loading station. The film is annealed at a temperature of 80 to 170°C for 10 to 40 minutes, but typically the film is typically annealed at 110°C for 10 minutes. A typical film thickness observed is about 40 nm.
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Abstract
Description
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