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CdGeAs2 crystal etching agent and etching method

An etchant and crystal technology, used in crystal growth, chemical instruments and methods, preparation of test samples, etc., can solve the problem that the three-dimensional etching pit morphology image cannot be seen, the CdGeAs2 crystal corrosion research has not been reported, and the etching pit pattern is not enough. Clear and other problems, to achieve the effect of low cost, good corrosiveness, and short time

Inactive Publication Date: 2010-09-29
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the pattern of the observed pits is not clear enough, and the three-dimensional pits with regular shapes cannot be seen.
Furthermore, regarding CdGeAs 2 Crystal corrosion research has not been reported

Method used

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  • CdGeAs2 crystal etching agent and etching method
  • CdGeAs2 crystal etching agent and etching method
  • CdGeAs2 crystal etching agent and etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] In this example, CdGeAs 2 The etchant for the crystal is prepared from hydrochloric acid, nitric acid and deionized water, the mass concentration of the hydrochloric acid is 35-38%, and the mass concentration of the nitric acid is 65-68%. The volume ratio of hydrochloric acid, nitric acid, deionized water is hydrochloric acid: nitric acid: deionized water=1:1:1, measure hydrochloric acid, nitric acid and deionized water respectively by described volume ratio, then hydrochloric acid, nitric acid are added deionized water and Stir evenly to form a corrosive agent.

Embodiment 2

[0028] In this example, CdGeAs 2 The (101) crystal face of the crystal is etched, and the etchant used is the etchant prepared in Example 1, and the process steps are as follows:

[0029] (1) Grinding and polishing

[0030] CdGeAs 2 The crystal (101) wafer is roughly ground and finely ground with 0#-02#-04#-06# metallographic sandpaper with an average particle size distribution of 50 μm to 5 μm, and then white corundum powder (average particle size 0.5 μm) and The suspension of deionized water (the mass ratio of white corundum powder and deionized water is 1:10) was mechanically polished on silk cloth for 20 minutes, and then rinsed with deionized water to obtain CdGeAs with a smooth surface. 2 Wafer; then place the mechanically polished wafer in a bromomethanol solution with a mass concentration of 3%, soak it at room temperature for about 1 minute for chemical polishing, and clean it with methanol, acetone, ethanol and deionized water in sequence after taking it out;

[0...

Embodiment 3

[0039] In this example, CdGeAs 2 The etchant for the crystal is prepared from hydrochloric acid, nitric acid and distilled water, the mass concentration of the hydrochloric acid is 35-38%, and the mass concentration of the nitric acid is 65-68%. The volume ratio of hydrochloric acid, nitric acid, distilled water is hydrochloric acid: nitric acid: distilled water=1:1:1, measure hydrochloric acid, nitric acid and distilled water respectively by said volume ratio, then add hydrochloric acid, nitric acid to distilled water and stir to form corrosive agent.

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Abstract

The invention provides a corrosive agent for a CdGeAs2 crystal, which is prepared from hydrochloric acid, nitric acid and pure water, wherein the volume ratio of the hydrochloric acid to the nitric acid to the pure water is 1 to 1 to 1, the mass concentration of the hydrochloric acid is between 35 and 38 percent, and the mass concentration of the nitric acid is between 65 and 68 percent. A CdGeAs2 crystal corrosion method utilizing the corrosive agent orderly comprises the following processing: (1) a step of corrosion, in which a CdGeAs2 crystal wafer is subjected to grinding and polishing and is immersed in the corrosive agent, is corroded by swinging at normal pressure and at a temperature of between 15 and 30 DEG C for 15 to 40 seconds and is taken out; (2) a step of washing, in which the CdGeAs2 crystal wafer taken out of the corrosive agent is immersed in an alkaline cleaner to stop the corrosive reaction, and is washed to be neutral by pure water; and (3) a step of drying, in which the washed CdGeAs2 crystal wafer is naturally dried or oven-dried at the normal pressure.

Description

technical field [0001] The invention belongs to the corrosion field of ternary compound semiconductor materials, in particular to a kind of CdGeAs 2 Crystal etchant and etching method. Background technique [0002] Chalcopyrite crystal CdGeAs 2 (referred to as CGA), which belongs to the tetragonal structure, point group I42d, is an infrared nonlinear optical material. CdGeAs 2 The thermal expansion coefficient of the crystal differs by more than 15 times along the a-axis and the c-axis, which makes it extremely difficult to grow a complete and crack-free crystal, and the grown crystal has many defects. The occurrence and number of various defects are not only related to the crystal preparation process, but also have an important impact on the performance of the prepared device. [0003] There are many methods for experimental observation of crystal defects, such as transmission electron microscope, scanning electron microscope, infrared microscope and metallographic corr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10G01N1/32
Inventor 赵北君朱世富何知宇陈宝军邓江辉
Owner SICHUAN UNIV