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Semiconductor device having mim capacitor and method of manufacturing the same

A semiconductor and capacitor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as increasing chip size and hindering high integration

Inactive Publication Date: 2009-03-11
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the prior art MIM capacitor structure leads to an increase in chip size which hinders high integration

Method used

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  • Semiconductor device having mim capacitor and method of manufacturing the same
  • Semiconductor device having mim capacitor and method of manufacturing the same
  • Semiconductor device having mim capacitor and method of manufacturing the same

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Embodiment Construction

[0020] In the following detailed description of the embodiments, reference will now be made in detail to specific embodiments of the invention and to the embodiments illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. These specific embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. Moreover, it can be understood that various specific embodiments of the present invention, although different, are not necessarily independent of each other. For example, a distinctive feature, structure or characteristic described in one embodiment may also be included in other embodiments. Therefore, the following detailed description should not be interpreted as limiting, but the...

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Abstract

A semiconductor device having an MIM capacitor and a method of manufacturing the same. In one example embodiment, a semiconductor device having an MIM capacitor includes a lower electrode including a pair of metal patterns spaced apart from each other, a dielectric formed so as to cover the surfaces of the spaced-apart metal patterns of the lower electrode, a metal plug formed on the dielectric, and an upper electrode made of a metal and formed on the metal plug.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2007-0090205 filed on September 6, 2007, the entire contents of which are hereby incorporated by reference. technical field [0003] Embodiments of the present invention relate to a semiconductor device having a metal insulator metal (MIM) capacitor, and more particularly, to a semiconductor device having a MIM capacitor capable of increasing capacitance while reducing a capacitor area and a method of manufacturing the same. Background technique [0004] There is increasing use and interest in merged memory and logic semiconductors. A device combining memory and logic is a structure in which a memory such as a dynamic random access memory (DRAM) and a logic such as a logic circuit are realized in a single chip. Implementation of memory and logic in a single chip in a semiconductor device combining memory and logic is advantageous over conventional ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/108H01L27/06H01L27/08H01L23/522H01L29/92H01L21/82H01L21/768H01L21/02
CPCH01L2924/0002H01L28/40H01L2924/3011H01L23/5223H01L2924/00H10B12/00
Inventor 金珉爽
Owner DONGBU HITEK CO LTD