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Method of programming nonvolatile memory device

A technology for non-volatile storage and storage cells, applied in the field of programming non-volatile storage devices, can solve problems such as increased threshold voltage distribution, and achieve the effect of reducing saturation time and reducing over-programming

Active Publication Date: 2013-04-17
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the distribution of the threshold voltage of the programmed state will increase

Method used

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  • Method of programming nonvolatile memory device
  • Method of programming nonvolatile memory device
  • Method of programming nonvolatile memory device

Examples

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Embodiment Construction

[0060] Now hereinafter, example embodiments will be described more fully with reference to the accompanying drawings. Embodiments may, however, be embodied in many different forms and should not be construed as limited to the example embodiments set forth herein. Rather, these example embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity.

[0061] It should be understood that when an element is referred to as being "on," "connected to," or "coupled to" another element, it can be directly on, connected to, or directly on the other element. A component is either directly coupled to another component, or intermediate components may be present. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another element, there are no int...

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Abstract

A programming method of a non volatile memory device is provided to prevent an over program by saturating a threshold voltage within a fast time. A programming method of a non volatile memory device comprises the following steps: a step for supplying a program voltage to a memory cell(S10); a step for supplying a supplement pulse in order to stabilize a charge after supplying the program voltage(S30); a step for supplying a recovery voltage to the memory cell after supplying the supplement pulse(S40); and a step for supplying a verification voltage after supplying the recovery voltage(S50).

Description

technical field [0001] Example embodiments relate to a method of programming a nonvolatile memory device, for example, to a method of programming a nonvolatile memory device capable of more effectively reducing a threshold voltage distribution in a programmed state. Background technique [0002] A nonvolatile memory is a storage device capable of storing data even when power supply is stopped. Floating gate type flash memory, which operates by storing charges in a floating gate formed of polysilicon, has been commercialized as an example of a larger-capacity nonvolatile memory change. The storage unit of the flash memory is divided into a single level cell (SLC, single level cell) type and a multi-level cell (MLC, multiple level cell) type. In the SLC type storage unit, "1" and "0" are recorded in a single unit. "Two recording states, in MLC type memory cells, four or more recording states such as "11", "10", "01" and "00" are recorded in a single cell. [0003] Multileve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
CPCG11C11/5628G11C16/0483G11C16/12G11C16/3459
Inventor 朴祥珍薛光洙崔奇焕成政宪崔相武
Owner SAMSUNG ELECTRONICS CO LTD