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Semiconductor Package Substrate Structure

A technology for packaging substrates and semiconductors, which is applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., can solve problems such as bad, easy-to-produce offset electrical connections, etc., and achieve the effect of ensuring quality and reliability

Active Publication Date: 2011-11-30
UNIMICRON TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, the height of the insulating protective layer 33 is not completely flat, and the height of some parts will be higher or lower than the average height, so that a height difference e' will be generated between the surfaces of the insulating protective layer 33 in different regions. The hole 330 is used to expose the electrical connection pad 321, and the metal bump 34 of the semiconductor chip 31 is connected to the electrical connection pad 321, which is prone to offset or poor electrical connection; especially the non-insulating protective layer Definition (Non SolderMask Defined, NSMD, that is, the pad is not covered by an insulating protective layer) products are more serious

Method used

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  • Semiconductor Package Substrate Structure
  • Semiconductor Package Substrate Structure
  • Semiconductor Package Substrate Structure

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0057] see Figure 4A to Figure 4I ’ is a schematic cross-sectional view showing the manufacturing method of the first embodiment of the semiconductor package substrate structure of the present invention.

[0058] like Figure 4A As shown, a circuit board 40 is first provided, and a conductive layer 41 is formed on the surface of the circuit board 40. The material of the conductive layer 41 can be selected from the group consisting of copper, tin, nickel, chromium, titanium and copper-chromium alloy One of them, or the material of the conductive layer 41 is a conductive polymer, and the conductive layer is preferably copper foil or electroless copper plating.

[0059] like Figure 4B As shown, a first resistance layer 42 is formed on the surface of the conductive layer 41 which is a dry film or liquid photoresist, and the first resistance layer 42 is formed with an opening 420 to expose part of the conductive layer 41 .

[0060] like Figure 4C As shown, at least one first...

no. 2 example

[0071] see Figure 5A to Figure 5I ’, is a schematic cross-sectional view showing the manufacturing method of the second embodiment of the semiconductor package substrate structure of the present invention.

[0072] This example Figure 5A to Figure 5I ’ process steps and structure, of which Figure 5A to Figure 5C is the same as the first embodiment Figure 4A to Figure 4C The recipe shown is the same; however, as Figure 5D The ones shown in the following are different, and a second resistance layer 44 is formed on the surface of the first resistance layer 42, the first electrical connection pad 43a and the circuit 43b, which is a dry film or liquid photoresist, and the second resistance layer 44 An opening 440 is formed to expose the first electrical connection pad 43a, wherein the second resistance layer opening 440 exposes part of the upper surface of the first electrical connection pad 43a; Figure 5E to Figure 5G As shown, the conductive column 45 is formed by elect...

no. 3 example

[0074] see Figure 6A to Figure 6I , is a schematic cross-sectional view showing the manufacturing method of the third embodiment of the semiconductor packaging substrate structure of the present invention; the difference from the first and second embodiments is that the surface of the circuit board has first and second electrical connection pads and circuits.

[0075] like Figure 6A As shown, firstly, a circuit board 40 is provided, and a conductive layer 41 is formed on the surface of the circuit board 40 .

[0076] like Figure 6B As shown, a first resistance layer 42 is formed on the surface of the conductive layer 41 , and the first resistance layer 42 is formed with an opening 420 to expose part of the conductive layer 41 .

[0077] like Figure 6CAs shown, the conductive layer 41 is used as a current conduction path for electroplating, so that at least one first electrical connection pad 43a, a circuit 43b and a second electrical connection are formed on the surface...

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PUM

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Abstract

The invention discloses a semiconductor packaging base plate structure, which comprises a circuit board which is provided with a plurality of first electric connection pads on at least one surface thereof, a conducting post which is arranged on the surfaces of the first electric connection pads, and an insulating protective layer which is arranged on the surface of the circuit body, and is provided with open holes to expose the conducting post, wherein the conducting post is projected out the surface of the insulating protective layer in order to electrically connect with a semiconductor chip easily, and to guarantee the quality and reliability of the past packaging process.

Description

technical field [0001] The invention relates to a structure of a semiconductor packaging substrate, in particular to a structure in which a conductive element electrically connected to the outside is formed on an electrical connection pad on the surface of a circuit board. Background technique [0002] In the current Flip Chip technology, there are electrode pads on the active surface of the semiconductor chip of the integrated circuit (IC), and the organic circuit board also has electrical connection pads corresponding to the electrode pads. A solder structure or other conductive adhesive material is formed between the pad and the electrical connection pad of the circuit board, and the solder structure or conductive adhesive material provides electrical connection and mechanical connection between the semiconductor chip and the circuit board. [0003] like figure 1 As shown, the flip chip technology is to form a plurality of metal bumps 11 on the electrode pads 121 of a se...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/498
CPCH01L2224/16225
Inventor 许诗滨
Owner UNIMICRON TECH CORP