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Method for preparing polycrystalline silicon layer

A polysilicon layer and manufacturing method technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of difficult cost reduction and difficult steps, and achieve the effect of simplifying the manufacturing process and reducing the cost.

Inactive Publication Date: 2009-04-15
CHUNGHWA PICTURE TUBES LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the steps of the existing polysilicon layer manufacturing method are not easy to simplify, and the cost is not easy to reduce

Method used

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  • Method for preparing polycrystalline silicon layer
  • Method for preparing polycrystalline silicon layer
  • Method for preparing polycrystalline silicon layer

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no. 1 example

[0056] 3A to 3E are schematic cross-sectional views of the fabrication process of the fabrication method of the polysilicon layer according to an embodiment of the present invention. First, please refer to FIG. 3A , a substrate 300 is provided. This substrate 300 may be a glass substrate or a quartz substrate.

[0057] Next, please refer to FIG. 3A again, an amorphous silicon layer 330 is formed on the substrate 300 . The method for forming the amorphous silicon layer 330 is, for example, chemical vapor deposition (Chemical Vapor Deposition, CVD). In one embodiment, before forming the amorphous silicon layer 330 on the substrate 300, it further includes forming an adhesive layer 310 and a barrier layer 320 on the substrate 300, wherein the adhesive layer 310 is disposed on the substrate 300, and the barrier layer 320 is formed on the substrate 300. Layer 320 is disposed on adhesive layer 310 . The method for forming the adhesive layer 310 and the barrier layer 320 is, for e...

no. 2 example

[0065] FIGS. 4A-4E are schematic cross-sectional views of the manufacturing process of the manufacturing method of the polysilicon layer according to another embodiment of the present invention. First, please refer to FIG. 4A , a substrate 400 is provided. This substrate 400 may be a glass substrate or a quartz substrate.

[0066] Next, please refer to FIG. 4A again, an amorphous silicon layer 430 is formed on the substrate 400 . The method for forming the amorphous silicon layer 430 is, for example, chemical vapor deposition (Chemical Vapor Deposition, CVD). In one embodiment, before forming the amorphous silicon layer 430 on the substrate 400, it further includes forming an adhesive layer 410 and a barrier layer 420 on the substrate 400, wherein the adhesive layer 410 is disposed on the substrate 400, and the barrier layer 420 is formed on the substrate 400. Layer 420 is disposed on adhesive layer 410 . The method of forming the adhesive layer 410 and the barrier layer 42...

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Abstract

The invention relates to a method for manufacturing a polysilicon layer. Firstly, a baseplate is provided. Subsequently, an amorphous silicon layer is formed on the baseplate. Then, a patterned photo mask is provided and comprises a transparent area and a shading area. The patterned photo mask is used as a mask to irradiate a light towards the amorphous silicon layer, wherein, the amorphous silicon layer corresponding to the transparent area is transformed into a hydrophilic amorphous silicon layer, and the amorphous silicon layer corresponding to the shading area is a hydrophobic amorphous silicon layer. Then, hydrophilic metal catalyst is provided and arranged on the hydrophilic amorphous silicon layer. Afterwards, an annealing processing procedure is carried out to ensure that the hydrophilic metal catalyst forms a metal catalyst layer, and the amorphous silicon layer is transformed into the polysilicon layer under the action of the metal catalyst layer.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor layer, and in particular to a manufacturing method of a polysilicon layer. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD) has become the mainstream of many flat panel displays. According to the selection of the material of the channel layer, TFT LCDs can be divided into two types: amorphous silicon TFT LCDs and low-temperature polysilicon thin film transistors (Low-Temperature PolySilicon Thin Film Transistor, LTPS-TFT) LCDs. . [0003] Based on the above, since the electron mobility of the low-temperature polysilicon thin film transistor can reach 200cm 2 / V-sec or more, so the area occupied by the TFT element can be made smaller to meet the requirement of high aperture ratio (aperture), thereby increasing the brightness of the display and reducing the overall power consumption problem. In addition, due to the increase in electron mobilit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20
Inventor 蔡依芸丘绍裕马佳萱游培甄
Owner CHUNGHWA PICTURE TUBES LTD