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Method for monitoring technique microparticle and defect of wafer surface

A technology of particles and wafers, which is applied in the monitoring field of wafer surface and process particles and defects, and can solve the problem of being unable to measure whether there are particles attached to tiny defects on the wafer

Inactive Publication Date: 2009-04-15
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a method for monitoring wafer surface and process particles and defects, so as to solve the problem that when the size of defects or particles on the wafer is smaller than the detection limit of the measuring machine, the wafer cannot be measured. Whether there are particles attached to the circle or whether there is a problem with the formation of small defects

Method used

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  • Method for monitoring technique microparticle and defect of wafer surface
  • Method for monitoring technique microparticle and defect of wafer surface

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Embodiment Construction

[0016] Figure 1A to Figure 1B , which is a schematic cross-sectional flow diagram of a method for measuring wafer defects according to a preferred embodiment of the present invention.

[0017] Please refer to Figure 1A Firstly, a wafer 100 is provided, wherein the wafer 100 may be a wafer in process or a wafer. And if the wafer 100 is a wafer being processed, the method of the present invention can be used to monitor whether there are particles 102 attached or defects 104 formed on the substantially effective surface of the wafer. If the wafer 100 is a control wafer, the method of the present invention can place the control wafer in a process tool and simulate the process state, so as to monitor the amount of particles 102 and defects 104 that may be generated by the process tool. Wherein, the monitored particles 102 and defects 104 have a size smaller than 0.1 micron.

[0018] After that, please refer to Figure 1B , forming a substantially uniform conformal coating laye...

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Abstract

The invention relates to a method for monitoring the particle and the disadvantage of a wafer surface and a wafer technology, wherein, the method for monitoring the particle and the disadvantage of the wafer surface uses a measuring machine to monitor the particle and the disadvantage on a real effective surface of a wafer. Before monitoring, a real uniform conformal cladding layer is formed on the real effective surface of the wafer, and the thickness of the conformal cladding layer is controlled to ensure that the outlines of the possibly effective particle and disadvantage on the wafer surface are enlarged properly.

Description

[0001] The present invention is the application number: 02106865.8 filing date: March 6, 2002 [0002] Invention name: Divisional application for the monitoring method of wafer surface and process particles and defects. technical field [0003] The present invention relates to a method for monitoring a semiconductor process, and in particular relates to a method for monitoring wafer surfaces, process particles (Particles) and defects (Defects). Background technique [0004] Usually, in the process flow of a semiconductor factory, a monitoring station will be set up after some key process steps. The purpose of setting up this monitoring station is to monitor whether there are particles attached or defects formed during the critical process of the wafer. Because in these critical process steps, if particles are attached or defects are formed on the wafer, it may affect the subsequently formed devices. Therefore, it is very important to monitor whether there is particle attac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 陈石晏曾昭权
Owner MACRONIX INT CO LTD