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Apparatus for producing trichlorosilane and method for producing thrichlorosilane

A technique for manufacturing devices for trichlorosilane, which is applied in the direction of halosilane and silicon halide compounds, can solve the problems of poor reaction efficiency and small contact area, and achieve the goal of improving reaction efficiency, increasing contact area, and improving reaction efficiency Effect

Active Publication Date: 2013-03-27
高纯度硅股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the bubbles of the hydrogen chloride gas become larger, the contact area with the metal silicon powder becomes smaller, so the reaction efficiency tends to deteriorate especially in the upper part of the reaction furnace.

Method used

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  • Apparatus for producing trichlorosilane and method for producing thrichlorosilane
  • Apparatus for producing trichlorosilane and method for producing thrichlorosilane
  • Apparatus for producing trichlorosilane and method for producing thrichlorosilane

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Embodiment Construction

[0028] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0029] This trichlorosilane manufacturing apparatus 1 includes: a reaction furnace 2, a raw material supply mechanism 3 for supplying metal silicon powder as a raw material to the reaction furnace 2, a gas introduction mechanism 4 for introducing hydrogen chloride gas reacting with the metal silicon powder, and A gas extraction mechanism 5 that discharges the generated trichlorosilane gas.

[0030] The reaction furnace 2 includes a vertically vertical chamber 6 formed mostly in a straight cylindrical shape, a bottom 7 connected to the lower end of the chamber 6 , and a large-diameter portion 8 connected to the upper end of the chamber 6 . At this time, the bore portion 6 and the bottom portion 7 are formed to have approximately the same diameter, and are separated by a horizontal partition wall 9 therebetween. On the other hand, on the top of the bore portion 6, a ta...

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Abstract

The present invention provides a device for producing trichlorosilane and a preparing method thereof. The hydrogen chloride gas leaded in from the lower part of the reacting furnace can be facilitated to effectively participate into the reaction at the upper part of the reacting furnace for increasing the reacting efficiency. The hydrogen chloride gas is used for causing that the metallic silicon powder supplied into the reacting furnace flows and simultaneously reacts in the device for producing trichlorosilane, and the trichlorosilane generated through reaction is taken out from the upper part of the reacting furnace. The inner space of the reacting furnace is provided with a plurality of current controlling components in the vertical direction.

Description

technical field [0001] The present invention relates to a trichlorosilane production apparatus and a trichlorosilane production method for producing trichlorosilane by reacting metal silicon powder with hydrogen chloride gas while flowing metal silicon powder with hydrogen chloride gas. Background technique [0002] Trichlorosilane (SiHCl) used as a raw material for producing high-purity silicon 3 ), which is produced by reacting metal silicon powder (Si) with a purity of about 98% and hydrogen chloride gas (HCl). [0003] Such a trichlorosilane production apparatus includes, for example, a reaction furnace, a raw material supply mechanism for supplying metal silicon powder to the bottom of the reaction furnace, and a gas introduction mechanism for introducing hydrogen chloride gas that reacts with the metal silicon powder, as disclosed in Patent Document 1, for example. In such a trichlorosilane production apparatus, the metal silicon powder in the reaction furnace is made...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
Inventor 稻叶力
Owner 高纯度硅股份有限公司