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Memorizer and voltage monitoring equipment thereof

A technology of voltage monitoring and memory, which is applied in the field of memory and can solve problems such as inconvenience

Active Publication Date: 2009-09-02
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the traditional method is quite inconvenient

Method used

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  • Memorizer and voltage monitoring equipment thereof
  • Memorizer and voltage monitoring equipment thereof
  • Memorizer and voltage monitoring equipment thereof

Examples

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no. 1 example

[0050] figure 1 It is a structural diagram of a memory voltage monitoring device according to the first embodiment of the present invention. Please refer to figure 1 The memory voltage monitoring device 10 includes a system voltage detector 20 , a charge pump circuit 30 , a data output unit 40 and an address transfer detector 50 . An address transition detector (Address Transition Detector, ATD for short) 50 is used to detect whether the address signal of the memory has changed, and accordingly generate a location transition detection signal ATDS. More specifically, when the address signal of the memory changes, the system voltage detector 20 will generate a pulse signal (ie, position transfer detection signal ATDS), and output it to the system voltage detector 20 .

[0051] The system voltage detector 20 can determine whether to detect the system voltage VCC according to the position transfer detection signal ATDS, and accordingly generate a plurality of control signals (re...

no. 2 example

[0069] Figure 4 It is a structural diagram of a memory voltage monitoring device according to the second embodiment of the present invention. Please merge reference figure 1 and Figure 4 , this embodiment is similar to the above embodiment. exist Figure 4 Winning mark and figure 1 For the same components, reference may be made to the descriptions of the above embodiments, and details are not repeated here. It should be noted that the switch unit 100 is added in this embodiment. The switch unit 100 can determine whether to transmit the control signals V27 , V29 , V31 , V33 , V35 , V38 , V41 , V45 to the first input terminals input_1 of the data output unit 40 according to the special command SC. The switch unit 100 will be described in more detail below.

[0070] Figure 5 is a structural diagram of a switch unit according to the second embodiment of the present invention. Please merge reference Figure 4 and Figure 5 , in this embodiment, the switch unit 100 inc...

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Abstract

The invention provides a memorizer and voltage monitoring equipment thereof, which comprise a system voltage detector, a charge pump circuit and a data output unit. The system voltage detector is coupled to the charge pump circuit and the data output unit. The system voltage detector is used for detecting system voltage and generating a control signal thereby; the charge pump circuit can generate character line voltage according to the control signal; and the data output unit can determine to output the control signal or the output data of the memorizer according to a special order, wherein the control signal corresponds to the character line voltage. Therefore, the invention can be used for easily monitoring the control signal and the character line voltage.

Description

technical field [0001] The present invention relates to a memory, and in particular to a memory voltage monitoring technology. Background technique [0002] In electronic devices, power supply voltages of various levels are often required, so charge pump circuits are often configured to generate power supply voltages of various levels by using existing power supply voltages. The word line voltage (Word Line Voltage) in the flash memory (Flash Memory) is generated by using the charge pump circuit. [0003] The word line voltage required by the flash memory for accessing data must be maintained within an appropriate voltage range. When the voltage of the word line is too high, the reliability of the flash memory will be problematic; conversely, when the voltage of the word line is too low, the flash memory will have a problem of read speed. [0004] Therefore, when the flash memory is unstable or the access speed is slow, the testing engineer must monitor the voltage of the ...

Claims

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Application Information

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IPC IPC(8): G11C29/50
Inventor 吴柏璋
Owner WINBOND ELECTRONICS CORP