Unlock instant, AI-driven research and patent intelligence for your innovation.

Sputtering target

A sputtering target and target material technology, which is applied in the field of sputtering targets, can solve problems such as inability to obtain sufficient effects, and achieve the effects of suppressing target cracks, preventing warping, and efficient sputtering

Active Publication Date: 2013-02-13
MITSUI MINING & SMELTING CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, the object of this method is not sputtering by applying a magnetic field to the sputtering target, but this method is applied to sputtering where the above-mentioned end of the target is subjected to a huge force and cracks are particularly likely to occur at this part, Can't get full effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sputtering target
  • Sputtering target
  • Sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0098] Such as Figure 4 As shown, for the target (T) made of ITO with the size of 127mm×381mm×4.8mm, the back plate (BP) made of Cu with the size of 150mm×440mm×7mm and the buffer made of Cu with the size of 127mm×381mm×0.3mm The plates were laminated and bonded with an indium-based bonding material to form a sputtering target. The thickness of the bonding layer (BN) between the target and the buffer plate was 0.01 mm, and the thickness of the bonding layer (BN) between the buffer plate and the back plate was 0.01 mm.

Embodiment 2

[0102] Except having made the thickness of a buffer plate 0.5 mm, it carried out similarly to Example 1, and produced the sputtering target. The thickness of the bonding layer between the target and the buffer plate is 0.01 mm, and the thickness of the bonding layer between the buffer plate and the back plate is 0.01 mm.

Embodiment 3

[0104] A sputtering target was produced in the same manner as in Example 1 except that the thickness of the buffer plate was 1 mm. The thickness of the bonding layer between the target and the buffer plate is 0.01 mm, and the thickness of the bonding layer between the buffer plate and the back plate is 0.01 mm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The object of the invention is to provide a sputtering target by which target material will not crack or fall off when a back plate is warped under the condition of sputtering while using cooling water to cool target material. The invention is characterized in that the sputtering target comprises a target material; a back plate; at least a baffle plate arranged between the target material and the back plate. The target material, the back plate and the baffle plate are integrally connected.

Description

technical field [0001] The invention relates to a sputtering target, in particular to a sputtering target which uses a large amount of cooling water to cool the target while sputtering, and the target is not prone to cracks. Background technique [0002] Conventionally, a sputtering method capable of easily controlling film thickness and composition has been widely used as a film-forming method of materials for electronic / electric components such as semiconductors. [0003] The sputtering target used in this type of sputtering method is generally constituted by bonding the target and the back plate with a bonding material. The target is made of the same material as the thin film to be formed. The back plate has excellent electrical conductivity and thermally conductive materials. When it is necessary to use a large-area target, a method of sputtering is performed while applying a magnetic field using a plurality of divided targets. [0004] If this type of sputtering targe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
Inventor 松前和男
Owner MITSUI MINING & SMELTING CO LTD