Voltage adjuster of semiconductor memory
A voltage regulator, memory technology, applied in static memory, digital memory information, information storage and other directions, can solve problems such as increased manufacturing cost and complexity
Active Publication Date: 2009-10-14
ELITE SEMICON MEMORY TECH INC
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[0011] U.S. Patent Publication No. 6195298 discloses another voltage regulator for supplying voltage and current to semiconductor devices. However, it is more complicated and increases manufacturing costs because of the relationship between three sets of amplifiers.
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[0038] Although the dynamic random access memory is exemplified in the illustrations and the following descriptions to illustrate the operating principles of the embodiments of the present invention, however, the embodiments of the present invention are not limited to use in dynamic random access memories, other such as SRAM (static random access Memory) or other random access memory, etc., any memory unit suitable for the present invention can be used.
[0039] In an embodiment of the present invention, the internal supply voltage of the semiconductor memory is preset at a high reference level before large current consumption (such as during bit line sensing). While the DRAM is activated, the internal supply voltage is maintained at a low reference level to maintain overall device reliability. After a large current draw, the internal supply voltage is reset at this high reference level. In bit line sensing, in order to increase the operating speed of the operational amplifie...
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The invention provides a voltage adjuster of a semiconductor memory, which comprises a comparing unit and an active driving element, wherein the comparing unit is provided with a first biasing current source and a second biasing current source and is used for comparing an output voltage with a first reference voltage and a second reference voltage under the control of a first control signal, and the second biasing current source is controlled by a second signal to be conducted; and the active driving element is coupled with the comparing unit and is used for outputting the output voltage. Before the sensing operation is carried out, the output voltage is reset at the second reference voltage; in the sensing operation, the output voltage is maintained at the first reference voltage, and the second signal causes the second biasing current source to be conducted to increase the operating speed of the comparing unit; and after the sensing operation is finished, the output voltage is reset at the second reference voltage.
Description
technical field [0001] The invention relates to a voltage regulator, in particular to a voltage regulator used in semiconductor memories such as DRAM (Dynamic Random Access Memory). Background technique [0002] By the way, with the rapid development of technology, the storage capacity of semiconductor memory, which is mainly used to store a large amount of data, has also been developed to be larger and larger. While semiconductor technology continues to reduce the size to achieve larger storage capacity, in order to make the memory have higher reliability and low power consumption, the voltage regulator on the chip must have a lower supply voltage for the internal circuit. function can be realized. For the bit line sensing of DRAM, the update and pre-charge operation of the memory cell array will suddenly and seriously consume current; for high-density DRAM, a voltage regulator is designed on the chip to control the memory cell array. Providing a stable voltage level (Vsa...
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IPC IPC(8): G11C5/14G11C11/4074G05F1/56
Inventor 周敏忠姚泽华
Owner ELITE SEMICON MEMORY TECH INC