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Plasma processing reactor with multiple capacitive and inductive power sources

A plasma and capacitive coupling technology, applied to circuits, discharge tubes, electrical components, etc., can solve problems such as reduced life of electrostatic chucks, long cleaning time, and impact on manufacturing productivity

Active Publication Date: 2009-10-14
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Electrostatic chucks are used to support substrates during substrate etching, and bombarding exposed electrostatic chucks can lead to reduced life of the electrostatic chuck and particle generation
In addition, the capacitively coupled plasma generated by the upper and lower electrodes in the chamber is mainly concentrated in the central area above the electrostatic chuck, making it ineffective to clean the peripheral chamber hardware
Longer cleaning times are required to completely clean peripheral chamber hardware, impacting manufacturing productivity

Method used

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  • Plasma processing reactor with multiple capacitive and inductive power sources
  • Plasma processing reactor with multiple capacitive and inductive power sources
  • Plasma processing reactor with multiple capacitive and inductive power sources

Examples

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Embodiment Construction

[0020] Several exemplary embodiments of improved more efficient and flexible chamber cleaning and etching systems, methods, and apparatus will now be described. It will be understood by those skilled in the art that the present invention may be practiced without some or all of the specific details described herein.

[0021] As previously stated, a reproducible chamber wall surface condition after etching each substrate improves yield. Efficient in-situ process chamber cleaning has become a key feature of next-generation plasma etch reactors. One embodiment of the invention provides a second plasma source surrounding the substrate support. The second plasma source near the periphery of the chamber may be activated during chamber processing operations after substrate etching to clean peripheral chamber hardware that has accumulated etch by-products during substrate etching. Figure 1A A schematic cross-sectional view of a plasma processing apparatus 100 is shown having a second...

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PUM

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Abstract

Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism, apparatus and method. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an inner bottom electrode and an outer bottom electrodedisposed outside of the inner bottom electrode, wherein the inner bottom electrode is configured to receive a substrate. The plasma processing chamber also includes a top electrode assembly with a to p electrode, wherein the top capacitive electrode is disposed directly above the inner and outer bottom electrodes.

Description

technical field [0001] The present invention relates to plasma processing reactors having multiple capacitive and inductive power supplies. Background technique [0002] In the manufacture of semiconductor devices such as integrated circuits or flat panel displays, layers of material are alternately deposited onto and etched from the surface of a substrate such as a semiconductor wafer or glass plate. Etching of the deposited layer can be accomplished by various techniques, including plasma enhanced etching, as is known in the art. In plasma-enhanced etching, the actual etching of the substrate takes place inside a plasma processing chamber. During the etching process, a plasma is formed by an appropriate etching gas source to etch the areas of the workpiece not protected by the etch mask and leave the desired pattern. [0003] During plasma etching of a substrate, etch by-products consisting of photoresist or polymers formed from layers of etched material and etch chemica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B6/00C25F1/00C25F3/30C25F5/00
CPCH01J37/32862H01J37/32091H01J37/32082H01J37/321H01J37/32642C25F5/00C25F3/30C25F1/00B08B6/00
Inventor 拉金德尔·德辛德萨
Owner LAM RES CORP