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Vapor deposition methods for forming a metal- containing layer on a substrate

一种金属层、原子层沉积的技术，应用在金属材料涂层工艺、涂层、电气元件等方向，能够解决不良反应性、不合乎需要、难以成功碱土金属与气相沉积方法整合等问题

Active Publication Date: 2012-12-26
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Unfortunately, the successful integration of alkaline earth metals with vapor deposition methods has proven difficult
For example, although atomic layer deposition (ALD) of strontium β-diketonates has been revealed, the poor reactivity of these precursor compounds often requires high substrate temperatures and strong oxidizing agents to grow films, which are often overshadowed by carbon-containing impurities. Pollution
For example, carbon-containing impurities such as strontium carbonate are undesirable because these impurities can substantially reduce the dielectric constant of the resulting film

Method used

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  • Vapor deposition methods for forming a metal- containing layer on a substrate
  • Vapor deposition methods for forming a metal- containing layer on a substrate
  • Vapor deposition methods for forming a metal- containing layer on a substrate

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example 1

[0080] Example 1: Using Sr(thd) 2 As the organometallic strontium precursor compound, Ti(mpd)(thd) is used 2 Strontium titanate layers were deposited by ALD on platinum substrates as titanium precursor compounds and using ozone as the reactive gas. The titanium precursor flow rate was 0.8 milliliters (ml) per minute; the strontium precursor flow rate was 0.8 ml per minute; and the ozone flow rate was 3 standard liters per minute (slm) (using 15 vol% ozone). After each titanium oxide and strontium oxide deposition cycle, the lines were purged with tetrahydrofuran at a flow rate of 0.4 milliliters to 1 milliliter per minute for 15 seconds to 30 seconds. Using a vaporizer temperature of 290°C, 1 to 2 Torr (1.3×10 2 Pa to 2.6×10 2 The deposition is performed at a process pressure of Pa) and a substrate temperature of 300°C to 350°C. Suction was performed using a turbo pump to bring the pressure down to a baseline value of 20 mTorr (2.7 Pa).

[0081] Each titania deposition cy...

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Abstract

The atomic layer deposition method described in the present invention can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods described herein can form strontium titanate layers with low carbon content (eg, low strontium carbonate content), which can form layers with high dielectric constants.

Description

[0001] priority statement [0002] This application claims priority to US Patent Application Serial No. 11 / 705,992, filed February 14, 2007, which is hereby incorporated by reference in its entirety. technical field [0003] The present application relates to atomic layer deposition methods, which can be advantageously used to form metal-containing layers on substrates. For example, certain methods described herein can form strontium titanate layers with low carbon content (eg, low strontium carbonate content), which can form layers with high dielectric constants. Background technique [0004] The reduction in the size of integrated circuit devices has created a need to incorporate high dielectric constant (ie, high dielectric permittivity) materials into capacitors and gates. Since the minimum dimensions of current technologies are practically constrained by the use of standard dielectric materials, the search for novel high-k materials and methods is becoming increasingl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40C23C16/455H01L21/316H10B12/00
CPCC23C16/405C23C16/45531H01L21/31691H01G4/085H01L21/31604H01G4/1227C23C16/409C23C16/45529H01L21/3141H01L21/0228H01L21/02186H01L21/022H01L21/02197H01L21/02271
Inventor 巴斯卡尔·斯里尼瓦桑约翰·斯迈思
Owner MICRON TECH INC