Method for preparing cast polycrystalline silicon through melting silicon and doping nitrogen under nitrogen
A technology of polysilicon and nitrogen, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of low mechanical strength of polysilicon, and achieve the effects of less dislocation density, lower cost and longer life
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[0014] Example 1
[0015] Place 240 kg of polysilicon raw material in a crucible, add 60 g of dopant gallium, and load it into a furnace. Then the furnace chamber was evacuated and 99.999% purity nitrogen was introduced. The nitrogen pressure was 10 Torr and the nitrogen flow rate was 10 L / min. The polysilicon raw materials and gallium were gradually heated to 1420° C. until the silicon melt was completely melted. 5 hours after the nitrogen gas was introduced, the argon gas was changed to nitrogen gas, and then polysilicon was cast. Raise the heat preservation cover in the furnace at a speed of 2mm / min, and at the same time blow cooling helium gas into the bottom of the crucible, so that the heat exchange of the silicon melt mainly occurs at the bottom of the crucible, so that the silicon melt will gradually solidify from the bottom upward to form nitrogen doped Of polysilicon. The gallium concentration in the formed polysilicon is 1×10 16 / cm 3 , And the nitrogen concentration is...
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[0017] Example 2
[0018] Place 240 kg of polysilicon raw material in a crucible, add 6 g of dopant boron, and load it into a furnace. Then the furnace chamber was evacuated and 99.9999% purity nitrogen was introduced. The nitrogen pressure was 100 Torr and the nitrogen flow rate was 100 L / min. The polysilicon raw material and boron were gradually heated to 1450° C., until the silicon melt was completely melted. 16 hours after the nitrogen gas was introduced, the argon gas was changed to nitrogen gas, and the polysilicon casting started. Lift the heat preservation cover in the furnace at a speed of 4mm / min, and at the same time pass cooling water into the bottom of the crucible, so that the heat exchange of the silicon melt mainly occurs at the bottom of the crucible. In this way, the silicon melt will gradually solidify from the bottom upwards to form nitrogen-doped Polysilicon. The boron concentration in the formed polysilicon is 1×10 15 / cm 3 , And the nitrogen concentration is...
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