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Etching system and method of manufacturing semiconductor device

An etching device and resist technology, which is applied in semiconductor/solid-state device manufacturing, plasma, discharge tube, etc., can solve problems such as difficult etching shapes, and achieve an easy-to-control effect

Inactive Publication Date: 2009-12-23
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is very difficult to control the etched shape without changing process conditions such as ion energy and amount of radicals, and mask conditions such as mask material and shape.

Method used

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  • Etching system and method of manufacturing semiconductor device
  • Etching system and method of manufacturing semiconductor device
  • Etching system and method of manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0025] figure 1 is a schematic diagram of an etching apparatus according to Embodiment 1 of the present invention. The ceiling 12 of the vacuum chamber 10 is made of transparent quartz glass. A laser interference type endpoint detection device 14 is provided above the ceiling 12 of the vacuum chamber 10 . In the vacuum chamber 10, a gas supply unit 16 for introducing a processing gas and an exhaust unit 18 for exhausting the vacuum chamber 10 are provided.

[0026] In the vacuum chamber 10, a stage 22 on which the object to be processed 20 is placed is provided. An ICP electrode 24 (first electrode) is provided above the stage 22 in the vacuum chamber 10 . Between the ICP electrode 24 and the ceiling 12 of the vacuum chamber 10, a plurality of planar electrodes 26 (second electrodes) having antennas extending radially are provided.

[0027] The high-frequency power supply 28 is connected to the stage 22 via a matching box 30 . A high-frequency power supply 32 is connected...

Embodiment approach 2

[0039] Figure 10is a schematic diagram of an etching apparatus according to Embodiment 2 of the present invention. As variable capacitance elements, a plurality of fixed capacitors 52a, 52b, and 52c connected in parallel, and a plurality of switches 54a, 54b, and 54c connected in series to each of the fixed capacitors 52a, 52b, and 53c are provided instead of the variable capacitance elements of the first embodiment. Variable capacitance 36. Other structures are the same as those in Embodiment 1. The capacitance of the variable capacitance element can be changed by switching the switches 54a, 54b, and 54c, and the same effect as that of the first embodiment can be obtained.

Embodiment approach 3

[0041] Figure 11 is a schematic diagram of an etching apparatus according to Embodiment 3 of the present invention. A high-frequency power supply 32 (first high-frequency power supply) is connected to the ICP electrode 24 via a matching box 34 . In addition, a high-frequency power supply 56 (second high-frequency power supply) is connected to the planar electrode 26 via a matching box 58 . The high-frequency power supply 28 supplies high-frequency power to the stage 22, the high-frequency power supply 32 supplies high-frequency power to the ICP electrode 24, and the high-frequency power supply 56 supplies high-frequency power to the planar electrode 26, thereby generating process gas in the vacuum chamber 10. inductively coupled plasma. Other structures are the same as those in Embodiment 1. By changing the high-frequency power supplied from the high-frequency power source 56 to the planar electrode 26, the etching shape of the object 20 can be controlled. Therefore, the ...

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PUM

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Abstract

The invention provides an etching device capable of easily controlling the etch shape, not changing the working procedure condition or mask condition, and a method of manufacturing the semiconductor device. A stage (22) for the treated articles (20) is positioned in a vacuum chamber (10). An ICP electrode (24) (first electrode)is located in a vacuum chamber (10) and above the stage (22); a plane electrode (26) (second electrode) is located between the ICP electrode (24) and a ceiling (12) of the vacuum chamber (10). A high frequency power supply (32) is connected with the ICP electrode (24) and also connected to the plane electrode (26) via a variable capacitance (36) (a variable capacitance element). The high frequency power supply (32) supplies high frequency power to the ICP electrode (24) and the plane electrode (26) so as to produce an inductively coupled plasma in the process gas within the vacuum chamber (10).

Description

technical field [0001] The present invention relates to an etching device that generates inductively coupled plasma (ICP: Inductively Coupled Plasma) and a method of manufacturing a semiconductor device using the etching device. Background technique [0002] In the manufacturing process of semiconductor devices, dry etching of thin films such as epitaxial layers is performed using a patterned resist as a mask. In such dry etching, an etching apparatus that generates inductively coupled plasma is used (for example, refer to Patent Document 1: Japanese Patent Application Laid-Open No. 8-316210). [0003] The electrical characteristics of a semiconductor device are greatly affected by the etched shape. However, it is very difficult to control the etched shape without changing process conditions such as ion energy and amount of radicals, and mask conditions such as mask material and shape. Contents of the invention [0004] The present invention was conceived to solve the ab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/3065H01L21/311H05H1/24
CPCH01J37/32174H01J37/321
Inventor 堀江淳一
Owner MITSUBISHI ELECTRIC CORP
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