Compound semiconductor element, packaging structure of optoelectronic element and manufacturing method of optoelectronic element
A packaging structure, semiconductor technology, applied in the structural details of semiconductor lasers, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components and other directions, can solve problems such as poor heat dissipation
Active Publication Date: 2011-09-28
徐州博创建设发展集团有限公司
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Problems solved by technology
[0006] The present invention provides a packaging structure of a compound semiconductor element and a manufacturing method thereof. The semiconductor element directly exposes external electrodes or contacts to the sealing material, without the need for a printed circuit board to transmit electrical signals between the crystal grain and the external electrodes. Therefore, Can improve the problem of poor heat dissipation
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Embodiment Construction
[0090] Figure 2(a)~2(e) It is a schematic diagram of the steps of the manufacturing method of the compound semiconductor element packaging structure of the present invention. As shown in FIG. 2( a ), the temporary substrate 21 has a first surface 211 and a second surface 212 , in which the first surface 211 is an upper surface, and the second surface 212 is a lower surface. Temporary substrate 21 can be made of metal material, ceramic material or polymer material, and printing (printing), screen printing (screening), electroform (electroform), electroless plating (electroless plating) are arranged on its first surface 211. electroplating) or sputtering (sputter) to form a patterned conductive film layer 22 . The conductive film layer 22 can be silver, nickel, copper, tin, aluminum or an alloy of the aforementioned metal materials, or indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO) and indium tungsten oxide (IWO) and other transparent conductive m...
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Abstract
The invention discloses a compound semiconductor element, a packaging structure of the optoelectronic element and a manufacturing method of the optoelectronic element. The packaging structure comprises a conducting film layer with patterns, crystal particles, at least one metal lead or metal bump and a transparent packaging glue material. The crystal particles is fixed on a first surface of the conducting film layer and is electrically connected with the conducting film layer through the metal lead or metal bump. The transparent packaging glue material is covered on the first surface of the conducting film layer and the crystal particles. A second surface of the conducting film layer is exposed from the transparent packaging glue material. The second surface is opposite to the first surface. The compound semiconductor element, the packaging structure of the optoelectronic element and the manufacturing method of the optoelectronic element of the invention have no printed circuit board for transmitting an electrical signal between the crystal particles and an external electrode, thereby solving the problem of a poor heat radiating effect.
Description
technical field [0001] The invention relates to a packaging structure of a compound semiconductor element and a manufacturing method thereof, in particular to a thin packaging structure of an optoelectronic semiconductor element and a manufacturing method thereof Background technique [0002] Due to the advantages of small size, high luminous efficiency and long lifespan of light emitting diodes (light emitting diodes; LEDs) among optoelectronic components, they are considered to be the best light source for green and energy-saving lighting in the future era. In addition, the rapid development of liquid crystal displays and the popular trend of full-color screens have made white light-emitting diodes not only used in indicator lights and large display screens, but also in a wide range of consumer electronics products, such as mobile phones and personal digital assistants (PDAs). ). [0003] figure 1 is a schematic cross-sectional view of a light emitting diode element of a...
Claims
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IPC IPC(8): H01L23/488H01L23/367H01L23/31H01L21/50H01L21/60H01L21/56H01S5/02H01S5/024
CPCH01L2224/16H01L2224/48091H01L2224/73265H01L2224/48227H01L2224/32225H01L2224/92247
Inventor CHEN BINQUANZHANG CHAOXIONGLIN SHENGBAICHEN LONGXINZENG WENLIANG
Owner 徐州博创建设发展集团有限公司