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Plural gas distribution system

A technology for gas distribution, shower head, applied in directions from chemically reactive gases, crystal growth, gaseous chemical plating, etc.

Active Publication Date: 2010-01-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The cavity is used to accommodate multiple gases and discharge multiple gases

Method used

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Embodiment Construction

[0045] The following will provide a detailed description of the production and use of the preferred embodiment. However, it can be seen from the exemplification that many of the practicable inventive concepts provided by this embodiment can be implemented in various specific contexts. The specific embodiments presented only illustrate the making and use of the present invention using specific methods, but do not limit the scope of the present invention.

[0046] The present disclosure will be presented for the illustrated embodiments in a specific context, namely, a metalorganic chemical vapor deposition (MOCVD) system for forming an epitaxial layer on a workpiece. These embodiments are applicable to other semiconductor fabrication equipment (eg, etchers, furnaces, plasma reactors) and other similar equipment that would benefit from a multi-directional gas distribution system and / or device.

[0047] figure 1 It is a diagram showing a multi-directional gas distribution system...

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Abstract

A plural gas distribution system is presented. The system includes a chamber and a showerhead. The chamber is configured to contain and to exhaust a plurality of gases. The showerhead includes at least one multi-channel gas delivery tube with at least two sub-tubes within the multi-channel gas delivery tube, wherein the at least two sub-tubes are configured to simultaneously expel gases unmixed into the chamber.

Description

technical field [0001] The invention relates to a multi-directional gas distribution system, in particular to a gas distribution system capable of delivering separated gases simultaneously. Background technique [0002] III / V semiconductors are used to fabricate devices such as microwave frequency integrated circuits. Microwave frequency integrated circuits can be, for example, infrared light emitting diodes, laser diodes, solar cells. Take the Group III / V semiconductor of gallium arsenide (GaAs) as an example, and gallium arsenide is a compound of arsenic and gallium. [0003] To form a III / V semiconductor layer in a semiconductor device, a gas containing III / V elements is released into a chamber having a workpiece. Through the interaction between group III elements and group V elements, a corresponding group III / V semiconductor can be deposited on the workpiece. Regarding the source gas added into the cavity during the semiconductor formation process, the source gas has...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
CPCC23C16/45576C23C16/4412C23C16/45565C23C16/45574C23C16/45504C23C16/301C30B25/14C23C16/45591
Inventor 余振华黄见翎
Owner TAIWAN SEMICON MFG CO LTD