Focus ring, plasma processing apparatus and plasma processing method

Abstract

A focus ring of a ring shape is disposed to surround a target substrate on a lower electrode on which the target substrate is mounted in a process chamber. The process chamber receives the target substrate and subjects the received target substrate to a plasma process. At the point of time when the focus ring is first used for the plasma process, a distance between a lower side of an edge portionof the target substrate and a portion of the focus ring facing the lower side of the edge portion of the target substrate is set to be equal to or greater than about 0.4 mm.

Description

technical field [0001] The invention relates to a focus ring, a plasma processing device and a plasma processing method. Background technique [0002] Conventionally, in the field of manufacturing semiconductor devices, etc., processing gas is converted into plasma, and predetermined processing, such as etching processing or film forming processing, is performed on a substrate to be processed, such as a semiconductor wafer or a glass substrate for LCD, etc. Devices are well known. [0003] In the plasma processing apparatus described above, for example, in a plasma processing apparatus that performs plasma etching processing on a semiconductor wafer, a focus ring is provided around the semiconductor wafer placed on the lower electrode to increase the plasma concentration in the plane of the semiconductor wafer. The technique for uniformity of bulk processing is well known (for example, refer to Patent Document 1 and Patent Document 2). [0004] Patent Document 1: Japanese ...

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Problems solved by technology

[0007] However, the above-mentioned exchange of the focus ring will become one of the reasons for the decrease in the operating rate of the plasma processing apparatus, and it will also become a factor for increasing the running cost.

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