Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing giant magnetoresistance films by vacuum vapor deposition method

A technology of giant magnetoresistance and evaporation method, which is applied in vacuum evaporation plating, sputtering plating, ion implantation plating, etc., can solve the problem of poor compactness and uniformity, difficulty in achieving anisotropy, and weak interlayer adhesion and other problems, to achieve the effect of good consistency, low preparation cost and uniform film

Inactive Publication Date: 2010-03-10
ZHEJIANG NORMAL UNIVERSITY
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] All the single-layer or multi-layer thin film methods of preparing giant magneto-impedance effects reported at present use the magnetic sputtering method, and there is no practical and effective method for preparing by vacuum evaporation. The main reason is that the evaporation method is currently used to prepare Such films generally have the disadvantages of weak interlayer adhesion, poor density and uniformity, and difficulty in achieving anisotropy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing giant magnetoresistance films by vacuum vapor deposition method
  • Method for preparing giant magnetoresistance films by vacuum vapor deposition method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The method for preparing the giant magnetoresistance thin film material by the vacuum evaporation method of the present invention is when preparing the FeSiB monolayer thin film, what we adopt is the DMDE-450 type coating machine, with magnetic deflection 270 ° electron gun and film thickness controller, can vapor deposition Various high and low melting point metals and oxide materials. SiO 2 The substrate is cleaned in the following steps: (1) the substrate is polished with polishing powder, and the polishing powder for polishing the substrate is preferably rare earth polishing powder. It is recommended to use cerium oxide polishing powder, which has fine particle size, strong grinding force, fast polishing speed, good brightness and easy cleaning. The reason why cerium oxide is an extremely effective polishing compound is that it can simultaneously polish the substrate in two forms of chemical decomposition and mechanical friction; (2) Place the substrate in a quartz...

Embodiment 2

[0032] The method for preparing the giant magnetoresistance thin film material by the vacuum evaporation method of the present invention also adopts a DMDE-450 type coating machine with a magnetic deflection 270° electron gun and a film thickness controller when preparing the FeSiB / Cu / FeSiB multilayer film. , can evaporate various high and low melting point metals and oxide materials. SiO 2 The substrate cleaning is also the same, also at 10 -4 ~10 -3 Pa low pressure environment. A method of keeping the glass substrate in a stable magnetic field is also adopted. Specifically, permanent magnets are added on both sides of the glass substrate to provide a stable magnetic field of 0.2T, so that the glass substrate is always under the action of this stable magnetic field during the entire coating process. The atomic ratio of the FeSiB thin film material is 77.5:7.5:15 , the material has been alloyed in this proportion in advance. When the vacuum degree of the vacuum chamber re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
strengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for preparing giant magnetoresistance films by a vacuum vapor deposition method. The method adopts a vacuum film plating machine capable of carrying out vapor deposition of metals and oxide materials of various melting points, and comprises the following steps: polishing a SiO2 substrate; boiling the mixed solution of ammonia, hydrogen peroxide and deionized water, and washing by using deionized water; boiling the mixed solution of hydrochloric acid, hydrogen peroxide and deionized water and washing by using deionized water; carrying out ultrasonic and non-ultrasonic deionized water medium normal-temperature and heating polishing cleaning; drying inside a nitrogen furnace; and bombarding the surface of the substrate for cleaning by an ion gun inside a vacuum chamber. In a low-temperature environment, a magnet is arranged on a glass substrate to ensure that the to-be-plated glass substrate is positioned inside a stable magnetic field all the time during film plating; and the atomic weight ratio of a vapor deposition film material is controlled by a compensation type so as to ensure that a finished film obtained through vapor deposition has ideal consistency between alloy components and expected proportion and transverse uniaxial magnetic anisotropy in a short direction. The method is characterized in that the method has simple and easy process,low preparation cost and ideal consistency of the alloy components of a finished film and expected proportion; and the prepared FeSiB film is uniform, compact, stable and firm.

Description

technical field [0001] The invention belongs to the technical field of optical thin film preparation, in particular to a method for preparing a giant magnetoresistance thin film by vacuum evaporation. Background technique [0002] Giant Magneto-impedance (GMI) effect: It refers to the phenomenon that the AC impedance of soft magnetic materials changes significantly with the change of the external DC magnetic field under the high-frequency AC drive. Many studies have shown that amorphous or nanocrystalline wires (about 1mm) with significant GMI effect can meet many conditions required for new miniature magnetic sensors at the same time. The resonant oscillation circuit made of GMI components can be made into a new type of GMI effect magnetic sensor, which has higher magnetic flux detection rate and sensitivity than other magnetic effect sensors. With the popularization of information technology, the development of various information equipment, electromechanical equipment su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/54G02B1/10
Inventor 彭保进应朝福万旭叶晶刘蕴涛
Owner ZHEJIANG NORMAL UNIVERSITY