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Resistive element and manufacturing method thereof

A resistance element and manufacturing method technology, applied in the direction of resistance manufacturing, electrical components, resistors, etc., can solve the problems of high difficulty in etching resistance layer process and high manufacturing cost

Active Publication Date: 2012-08-29
CYNTEC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The multi-layer resistance layers are formed of different alloys or oxides and form a parallel circuit, so as to facilitate the manufacture of resistance elements with different resistance values; The process is more difficult

Method used

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  • Resistive element and manufacturing method thereof
  • Resistive element and manufacturing method thereof
  • Resistive element and manufacturing method thereof

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Embodiment Construction

[0048] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or back, etc., are only directions referring to the attached drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.

[0049] Such as figure 1 As shown, the resistance element 300 of an embodiment of the present invention is suitable for sensing the current in the circuit, and it has a low resistance value (resistance value) and a low temperature coefficient of resistance (temperature coefficient of resistance, TCR), preferably, its resistance value About less than 10mΩ and the temperature coefficient of resistance is about less than 100×10 -6 / K (ppm / K).

[0050] The resistance element 300 includes a carrier 31 , a res...

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Abstract

The invention provides a resistive element and a manufacturing method thereof, which are suitable for sensing current in a circuit. The resistive element comprises a bearing body, a resistive layer arranged on the bearing body, an electrode unit electrically connected with the resistive layer, an upper oxide layer directly arranged on a part of the resistive layer, and a protective layer coveringa part of the upper oxide layer, wherein the resistive layer comprises a copper alloy, while the upper oxide layer comprises an oxide of the copper alloy. The arrangement of the upper oxide layer canextend a contact area and strengthen adhesion between the protective layer and the resistive layer, and can increase the safety of the resistive element at a high temperature; and both the resistivity and the temperature coefficient of resistance of the upper oxide layer comprising the oxide of the copper alloy are close to those of the copper alloy, so the characteristics of the resistive element are not influenced significantly.

Description

technical field [0001] The present invention relates to a resistance element, in particular to a resistance element for sensing current and a manufacturing method thereof. Background technique [0002] A resistive element, which is one of the passive elements, is usually installed in the electronic device to sense the current in the circuit. Such a resistive element used for sensing current must generally have a low resistance value and a low temperature coefficient of resistance (TCR). [0003] U.S. Patent No. 7,238,296 discloses a known resistor element, using thick film printing technology to print the resistor layer on the substrate, then cover the glass protective layer and use laser trimming technology to adjust the resistance value, and finally cover the protective layer; and the resistor layer is made of An alloy of copper manganese germanium (Cu-Mn-Ge) metal powder mixed with copper oxide (Copper-Oxide Power) powder to reduce resistance and TCR. However, in order ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/00H01C17/00H01C17/06H01B1/02
Inventor 王钟雄生田英雄朱武良林彦霆郭至圣廖玟雄
Owner CYNTEC
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