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All-optical diode super-transmission device and manufacturing method thereof

An all-optical diode and device technology, applied in the field of communications, can solve the problems of complex and difficult to control the preparation process of periodically polarized lithium niobate crystals and two-dimensional photonic crystals

Inactive Publication Date: 2011-02-16
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the shortcomings of complex and difficult to control the preparation process of photonic crystal fiber, periodically poled lithium niobate crystal and two-dimensional photonic crystal in the prior art, and to provide a super-transmissive device based on surface plasmon resonance and its preparation method, the structure of the device is composed of three parts: a dielectric layer I, a metal layer and a dielectric layer II, wherein the dielectric layer I and the dielectric layer II are nonlinear optical materials, and the metal layer is engraved with periodic slits

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  • All-optical diode super-transmission device and manufacturing method thereof
  • All-optical diode super-transmission device and manufacturing method thereof
  • All-optical diode super-transmission device and manufacturing method thereof

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Embodiment 1

[0074] Embodiment 1 super-transmissive device

[0075] On a quartz substrate with a thickness of 17 μm and a length and width of 2 cm, a 200 nm-thick MEH-PPV film (as dielectric layer II) was prepared by using the commonly used chemical spin-coating technique; then, using the commonly used magnetron sputtering coating technology ( or electron beam evaporation technology, etc.) on the MEH-PPV film, a gold film (as a metal layer) with a thickness of 200nm is plated; the focused ion beam etching technology (or other photolithography technology) commonly used in the microelectronics industry is used to deposit gold on the gold film. Periodic slits are etched on the film, the slit period is 800nm, and the slit width is 50nm; finally, a 300nm thick MEH-PPV film (as the dielectric layer I) is prepared on the gold film by using the spin coating technique commonly used in chemistry. . Due to the surface tension of the liquid, MEH-PPV will not enter the slit during the spin-coating pro...

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Abstract

The invention discloses an all-optical diode super-transmission device and a manufacturing method thereof, and belongs to the technical field of communication. The super-transmission device comprises a dielectric layer I, a dielectric layer II and a metal layer positioned between the dielectric layer I and the dielectric layer II; periodical slits are engraved in the metal layer; and the dielectric layer I and the dielectric layer II are made of nonlinear optical materials. The manufacturing method for the super-transmission device comprises the following steps: firstly, determining the period of the slits of the metal layer and the thicknesses of the dielectric layer I and the dielectric layer II according to the working wavelength of an all-optical diode; then, calculating parameters byusing a numerical calculation method to acquire accurate results of all parameters; and finally, preparing the dielectric layer II, the metal layer and the dielectric layer I on a base material in turn, wherein the periodical slits are engraved in the metal layer, and the dielectric layer I and the dielectric layer II are made of nonlinear optical materials. The all-optical diode super-transmission device can realize the all-optical diode from visible light to optical communication wave bands, and has the characteristics of high response speed, simple structure, easy manufacture and convenient usage.

Description

technical field [0001] The invention relates to a surface plasmon resonance super-transmission device, in particular to an all-optical diode super-transmission device and a manufacturing method thereof, belonging to the technical field of communication. Background technique [0002] All-optical diode is an integrated photonic device that can realize unidirectional conduction of photons. It fully utilizes the interaction between photons and matter to realize the unidirectional conduction function of signal beams. It is one of the core components for constructing integrated photon circuits and realizing optical computing. It has a very important application background in the fields of optical communication, optical Internet and ultra-fast information processing. At present, the research on all-optical diodes at home and abroad is still mainly focused on theoretical research, using the saturable absorption and anti-saturation absorption effects of nonlinear optical materials [D...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/35
Inventor 胡小永张加祥辛诚龚旗煌
Owner PEKING UNIV