Method for improving properties of window layer material for single-chamber sedimentary silicon-based solar cells

Abstract

The invention provides a method for improving properties of window layer material for single-chamber sedimentary silicon-based thin film solar cells. The preparation of window layer material for single-chamber sedimentary silicon-based solar cells adopts a process combining high frequency, high pressure, high power density and small electrode spacing. The method not only applies to single / double / three-knot tandem microcrystalline silicon-based or nanometer silicon-based thin film solar cells, but also applies to the deposition of separate-chamber microcrystalline silicon-based thin film solar cells. The invention has the advantages that the method is simple in process, low in cost, low in cross contamination and strong in practicability, and the window layer material prepared through a rapid nucleation process simultaneously has high conductivity and high transmittance, obviously raises the open circuit voltage and short-circuit current density of the silicon-based thin film solar cells, and then improves the photoelectric conversion efficiency of the silicon-based thin film solar cells, thereby having important significance for the industrialization of single-chamber sedimentary microcrystalline silicon-based (nanometer silicon-based) thin film solar cells.

Description

【Technical Field】 [0001] The invention relates to the field of preparation of silicon-based thin film solar cells, in particular to a method for improving the performance of window layer materials for single-chamber deposited silicon-based solar cells. 【Background technique】 [0002] The low-cost characteristics of single-chamber plasma-enhanced chemical vapor deposition (PECVD) technology, combined with the new high-efficiency amorphous / microcrystalline silicon-based (nano-silicon-based) laminated battery technology, will make silicon-based thin-film solar cells cost-effective The potential advantages are truly reflected. However, the cross-contamination problem of single-chamber deposition is a problem that must be paid attention to. Especially for microcrystalline silicon-based (nano-silicon-based) thin-film solar cells, the pollution problem is more serious because of the high doping efficiency of microcrystalline silicon. This "unintentional" impurity doping will make the p...

AI Technical Summary

Problems solved by technology

However, the problem of cross-contamination due to single-chamber deposition is a problem that must be paid attention to, especially for microcrystalline silicon-based (nano-silicon-based) thin-film solar cells. The pollution problem is even more serious because of the high doping efficiency of microcrystalline silicon, This "unintentional" impurity doping will make the pollution problem more serious, making the short-circuit current density of microcrystalline silicon-based (nano-silicon-based) thin-film solar cells deposited in a single chamber much lower than that of microcrystalline silicon prepared in separate chambers. The short-circuit current density of silicon-based (nano-silicon-based) thin-film solar cells is almost close to the level of amorphous silicon thin-film solar cells, and the open-circuit voltage is lower than that of amorphous silicon thin-film solar cells, so the photoelectric conversion efficiency of the cells is very low.

[0003] In order to improve the efficiency of microcrystalline silicon-based (nano-silicon-based) thin-film solar cells and minimize the problem of cross-contamination, for single-chamber deposition of microcrystalline silicon-based (nano-silicon-based) thin-film solar cells, the deposition of the intrinsic layer A slightly higher crystallization rate is often required, that is, compared with the microcrystalline silicon-based (nano-silicon-based) thin-film solar cells deposited in separate chambers, the corresponding open circuit voltage has to be sacrificed in order to have a certain short-circuit current. Compared with microcrystalline silicon-based (nano-silicon-based) thin-film solar cells deposited in a single chamber, the open-circuit voltage is often relatively low, and because it is impossible to completely eliminate the corresponding pollution problem, the short-circuit current density is not very high.