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Method for recycling indium from silicon carbide materials containing indium

A technology of indium-containing silicon carbide and recycling methods, which is applied in the direction of improving process efficiency and can solve problems such as low efficiency and high production costs

Inactive Publication Date: 2012-03-14
南京中锗科技有限责任公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Current recycling methods are inefficient and expensive to produce

Method used

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  • Method for recycling indium from silicon carbide materials containing indium
  • Method for recycling indium from silicon carbide materials containing indium

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Embodiment Construction

[0012] The technical solutions of the present invention will be further described in detail below through specific examples.

[0013] The content of indium in silicon carbide materials ranges from a few thousandths to more than ten percent, and its source is abrasive debris mixed in when silicon carbide, aluminum oxide and other abrasives process indium-containing materials. This example provides sulfuric acid leaching, P 204 The method of extracting indium. Using this process, the recovery rate of silicon carbide material indium can reach more than 93%, the content of tin, cadmium, thallium, and lead in the crude indium of the product is below 100ppm, and the indium content is greater than 99.5%.

[0014] Principle: The extractant is made of 30% P 204 The rest is an organic phase composed of diluent kerosene, P 204 Exists in dimeric form due to hydrogen bonding (HR) 2 indicated that the extraction mechanism is

[0015] In 3+ +3(HR) 2 =In(HR 2 ) 3 +3H +

[0016] Pro...

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Abstract

The invention discloses a method for recycling indium from silicon carbide materials containing indium. The method comprises the following steps of: leaching: using secondary or tertiary leaching on the basis of the indium content of materials; treating before extraction: regulating the pH value of supernatant in a storage pool to 1-1.5, controlling the indium content of the solution below 6g / l, adding a small amount of hydrogen peroxide for oxidation after heating to 90DEG C or so, and making the supernatant come into the extracting process after adding flocculants for clarification; extracting: carrying out two-stage cross-current extraction in two circular agitating pools, and stirring for 3 minutes at each stage of extraction; stripping whenever extracting organic phases which are 3 times the amount of the indium solution, washing the organic phases before stripping with an aqueous sulfuric acid solution of which the pH value is 1 or so, and stripping with a hydrochloric acid solution of more than 6N for a stripping time of 30 minutes; and neutralizing and washing the stripping solution, acid-soluble oxidizing, curing, replacing and melt-casting to obtain crude indium.

Description

technical field [0001] The invention relates to a method for recovering indium in indium-containing silicon carbide materials. Background technique [0002] The content of indium in silicon carbide materials ranges from a few thousandths to more than ten percent, and its source is abrasive debris mixed in when silicon carbide, aluminum oxide and other abrasives process indium-containing materials. Current recycling methods are inefficient and expensive to produce. Contents of the invention [0003] Aiming at the deficiencies in the prior art, the present invention designs a method for recovering indium in indium-containing silicon carbide materials, and its technical scheme is: [0004] A method for recovering indium in an indium-containing silicon carbide material, the production process of which is as follows: [0005] Leaching: The silicon carbide material is leached with sulfuric acid for the first time, the acidity of the leaching is 1.5-2N, heating and stirring for...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22B58/00C22B3/06C22B3/08C22B3/26
CPCY02P10/20
Inventor 陈世平汪洋王友军
Owner 南京中锗科技有限责任公司
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